ROHM
晶体管 双极预偏置/数字, 单路PNP, -50 V, -100 mA, 1 kohm, 10 kohm, 0.1 电阻比率
ROHM
晶体管 双极预偏置/数字, 单路PNP, -50 V, -100 mA, 4.7 kohm, 4.7 电阻比率
NEXPERIA
单晶体管 双极, PNP, -20 V, 155 MHz, 390 mW, -3.5 A, 320 hFE
ON SEMICONDUCTOR
单晶体管 双极, NPN, 25 V, 300 MHz, 225 mW, 200 mA, 60 hFE
INFINEON
双路场效应管, MOSFET, 双N沟道, 8.9 A, 20 V, 0.0146 ohm, 10 V, 2.5 V
INFINEON
晶体管, MOSFET, P沟道, 3.8 A, -30 V, 98 mohm, 10 V, -2.5 V
ON SEMICONDUCTOR/FAIRCHILD
单晶体管 双极, NPN, 60 V, 100 MHz, 350 mW, 500 mA, 100 hFE
ON SEMICONDUCTOR
双路场效应管, MOSFET, 双N沟道, 7 A, 30 V, 0.018 ohm, 10 V, 2.6 V
VISHAY
晶体管, MOSFET, P沟道, -60 A, -20 V, 0.0016 ohm, -10 V, -1.4 V
ON SEMICONDUCTOR
单晶体管 双极, PNP, -50 V, 360 MHz, 900 mW, -3 A, 200 hFE
ROHM
晶体管 双极预偏置/数字, 单路PNP, -50 V, -500 mA, 2.2 kohm, 2.2 kohm, 1 电阻比率
NEXPERIA
晶体管, MOSFET, N沟道, 800 mA, 60 V, 0.3 ohm, 10 V, 1.7 V
NEXPERIA
晶体管, MOSFET, P沟道, -150 mA, -50 V, 4.5 ohm, -10 V, -1.6 V
ON SEMICONDUCTOR/FAIRCHILD
单晶体管 双极, PNP, -50 V, 40 MHz, 350 mW, -100 mA, 250 hFE
NEXPERIA
双极晶体管阵列, PNP, -45 V, 600 mW, -500 mA, 160 hFE, SOT-457
ON SEMICONDUCTOR
晶体管, MOSFET, P沟道, -1.6 A, -30 V, 0.233 ohm, -10 V, -2.6 V
INFINEON
晶体管, MOSFET, N沟道, 1.2 A, 30 V, 0.25 ohm, 10 V, 1 V
NEXPERIA
双路场效应管, MOSFET, AEC-Q101, 双PNP
VISHAY
晶体管, MOSFET, N沟道, 23 A, 60 V, 0.0272 ohm, 10 V, 2 V
ON SEMICONDUCTOR
单晶体管 双极, NPN, 50 V, 380 MHz, 900 mW, 3 A, 200 hFE
ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 7.6 A, 60 V, 0.019 ohm, 10 V, 2.5 V
ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 3 A, 35 V, 0.08 ohm, 10 V, 2.6 V
DIODES INC.
单晶体管 双极, NPN, 30 V, 300 MHz, 300 mW, 100 mA, 330 hFE
ON SEMICONDUCTOR
晶体管 双极预偏置/数字, 单路NPN, 50 V, 100 mA, 2.2 kohm, 47 kohm, 0.047 电阻比率
VISHAY
晶体管, MOSFET, P沟道, -8 A, -30 V, 0.027 ohm, -10 V, -3 V