ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 46 A, 30 V, 0.0058 ohm, 10 V, 2.2 V
ON SEMICONDUCTOR
晶体管, MOSFET, P沟道, -3 A, -20 V, 0.064 ohm, -4.5 V, -1.3 V
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, -11 A, -40 V, 13 mohm, -10 V, -1.4 V
ON SEMICONDUCTOR
晶体管 双极-射频, NPN, 12 V, 7 GHz, 800 mW, 150 mA, 100 hFE
ON SEMICONDUCTOR
晶体管, JFET, JFET, 30 V, 5 mA, 30 mA, -3 V, SOT-23, JFET
VISHAY
晶体管, MOSFET, N沟道, 60 A, 60 V, 0.0037 ohm, 10 V, 2 V
NEXPERIA
单晶体管 双极, PNP, -60 V, 150 MHz, 390 mW, -2.7 A, 300 hFE
NEXPERIA
晶体管 双极预偏置/数字, BRT, 单路NPN, 50 V, 100 mA, 4.7 kohm, 10 kohm
VISHAY
晶体管, MOSFET, N沟道, 100 A, 25 V, 0.00048 ohm, 10 V, 2.1 V
VISHAY
晶体管, MOSFET, N沟道, 2.6 A, 200 V, 1.5 ohm, 10 V, 4 V
ON SEMICONDUCTOR
晶体管, MOSFET, P沟道, -860 mA, -20 V, 120 mohm, -4.5 V, -1 V
ROHM
晶体管, MOSFET, N沟道, 250 mA, 60 V, 1.7 ohm, 10 V, 2.3 V
INFINEON
晶体管, MOSFET, N沟道, 106 A, 40 V, 0.0037 ohm, 10 V, 1.8 V
INFINEON
晶体管, MOSFET, N沟道, 3.2 A, 30 V, 0.1 ohm, 10 V, 1 V
VISHAY
功率场效应管, MOSFET, N沟道, 25 A, 600 V, 0.117 ohm, 10 V, 4 V
INFINEON
晶体管 双极-射频, NPN, 2.3 V, 65 GHz, 185 mW, 80 mA, 110 hFE
ON SEMICONDUCTOR/FAIRCHILD
双路场效应管, MOSFET, 双P沟道, -600 mA, -20 V, 0.3 ohm, -4.5 V, -1.2 V
DIODES INC.
单晶体管 双极, NPN, 80 V, 160 MHz, 625 mW, 1.5 A, 300 hFE
ON SEMICONDUCTOR
Bipolar (BJT) Single Transistor, PNP, -40 V, 250 MHz, 200 mW, -200 mA, 30 hFE
DIODES INC.
单晶体管 双极, PNP, 40 V, 270 MHz, 1.25 W, 3 A, 450 hFE
INFINEON
晶体管, MOSFET, N沟道, 40 A, 30 V, 0.0075 ohm, 10 V, 2.2 V
ON SEMICONDUCTOR/FAIRCHILD
晶体管, JFET, JFET, -30 V, 5 mA, 30 mA, -3 V, SOT-23, JFET
ROHM
晶体管, MOSFET, 低栅极驱动器, N沟道, 100 mA, 30 V, 13 ohm, 4 V, 1.5 V
ON SEMICONDUCTOR
双极晶体管阵列, NPN, PNP, 50 V, 900 mW, 1 A, 200 hFE, SOT-25
DIODES INC.
晶体管, MOSFET, P沟道, -3.1 A, -20 V, 0.062 ohm, -4.5 V, -1.01 V