VISHAY
晶体管, MOSFET, P沟道, -185 mA, -60 V, 6 ohm, -10 V, -3 V
VISHAY
功率场效应管, MOSFET, N沟道, 5.6 A, 650 V, 0.755 ohm, 10 V, 2 V
INFINEON
晶体管, MOSFET, N沟道, 36 A, 100 V, 0.021 ohm, 10 V, 4 V
VISHAY
晶体管, MOSFET, P沟道, -13.2 A, -100 V, 0.119 ohm, -4.5 V, -1 V
ON SEMICONDUCTOR
晶体管 双极-射频, NPN, 10 V, 7 GHz, 150 mW, 70 mA, 60 hFE
ON SEMICONDUCTOR
晶体管 双极-射频, NPN, 10 V, 7 GHz, 200 mW, 70 mA, 60 hFE
NEXPERIA
晶体管 双极-射频, NPN, 60 V, 100 MHz, 250 mW, 100 mA, 450 hFE
ON SEMICONDUCTOR
单晶体管 双极, NPN, PNP, -50 V, 390 MHz, 1.2 W, -3 A, 200 hFE
TEXAS INSTRUMENTS
双路场效应管, MOSFET, 双N沟道, 5 A, 20 V, 0.023 ohm, 4.5 V, 900 mV
DIODES INC.
晶体管, MOSFET, N沟道, 8.3 A, 30 V, 0.0205 ohm, 10 V, 2 V
DIODES INC.
双路场效应管, MOSFET, 双P沟道, -4.5 A, -20 V, 0.04 ohm, -4.5 V, -1 V
DIODES INC.
晶体管, MOSFET, P沟道, -3.5 A, -60 V, 0.11 ohm, -10 V, -3 V
ROHM
晶体管 双极预偏置/数字, AEC-Q101, 单路NPN, 50 V, 100 mA, 10 kohm, 10 kohm, 1 电阻比率
ON SEMICONDUCTOR
双路场效应管, MOSFET, 双N沟道, 10 A, 24 V, 0.0105 ohm, 4.5 V, 1.3 V
ON SEMICONDUCTOR
双路场效应管, MOSFET, N和P沟道, 7 A, 30 V, 0.018 ohm, 10 V
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 78 A, 100 V, 0.0059 ohm, 10 V, 3.2 V
INFINEON
晶体管, MOSFET, N沟道, 42 A, 75 V, 0.0128 ohm, 10 V, 4 V
ON SEMICONDUCTOR
晶体管 双极预偏置/数字, NPN和PNP执行, 50 V, 100 mA, 2.2 kohm, 47 kohm, 0.047 电阻比率
ON SEMICONDUCTOR
双路场效应管, MOSFET, 双N沟道, 3.7 A, 30 V, 0.047 ohm, 4.5 V, 700 mV
ON SEMICONDUCTOR
双路场效应管, MOSFET, 双P沟道, -4.4 A, -20 V, 0.037 ohm, -4.5 V, -1 V
ON SEMICONDUCTOR
晶体管, MOSFET, P沟道, -6.4 A, -20 V, 0.023 ohm, 4.5 V, -1 V
VISHAY
功率场效应管, MOSFET, N沟道, 29 A, 600 V, 0.085 ohm, 10 V, 5 V
VISHAY
晶体管, MOSFET, P沟道, -60 A, -30 V, 0.0036 ohm, -10 V, -2 V
VISHAY
双路场效应管, MOSFET, 双N沟道, 15 A, 40 V, 0.0133 ohm, 10 V, 2 V
VISHAY
晶体管, MOSFET, N沟道, 57 A, 60 V, 0.0072 ohm, 10 V, 3 V