NEXPERIA
单晶体管 双极, NPN, 30 V, 125 MHz, 250 mW, 500 mA, 10000 hFE
INFINEON
晶体管, MOSFET, N沟道, 63 A, 30 V, 0.0038 ohm, 10 V, 2 V
NEXPERIA
晶体管, MOSFET, P沟道, -2 A, -20 V, 0.12 ohm, -4.5 V, -700 mV
INFINEON
晶体管 双极-射频, NPN, 6 V, 14 GHz, 75 mW, 20 mA, 90 hFE
ON SEMICONDUCTOR/FAIRCHILD
单晶体管 双极, NPN, 25 V, 150 MHz, 2 W, 3 A, 15 hFE
DIODES INC.
单晶体管 双极, NPN, 65 V, 300 MHz, 300 mW, 100 mA, 330 hFE
INFINEON
晶体管, MOSFET, N沟道, 5 A, 500 V, 1.7 ohm, 10 V, 2 V
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 2 A, 400 V, 2.8 ohm, 10 V, 5 V
NEXPERIA
单晶体管 双极, 通用, NPN, 65 V, 100 MHz, 250 mW, 100 mA, 110 hFE
TEXAS INSTRUMENTS
晶体管, MOSFET, N沟道, 50 A, 40 V, 0.0053 ohm, 10 V, 1.9 V
DIODES INC.
单晶体管 双极, 达林顿, NPN, 100 V, 1 W, 800 mA, 10000 hFE
ON SEMICONDUCTOR/FAIRCHILD
单晶体管 双极, NPN, 45 V, 125 MHz, 350 mW, 200 mA, 120 hFE
NEXPERIA
单晶体管 双极, PNP, -40 V, 110 MHz, 1.1 W, -4 A, 200 hFE
INFINEON
晶体管 双极-射频, NPN, 4 V, 42 GHz, 500 mW, 150 mA, 110 hFE
INFINEON
晶体管, MOSFET, N沟道, 86 A, 60 V, 0.0055 ohm, 10 V, 4 V
STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 1.5 A, 900 V, 4.1 ohm, 10 V, 3.75 V
STMICROELECTRONICS
双路场效应管, MOSFET, 双N沟道, 4 A, 60 V, 0.045 ohm, 10 V, 1.7 V
DIODES INC.
单晶体管 双极, PNP, -45 V, 100 MHz, 150 mW, -100 mA, 520 hFE
NEXPERIA
双极晶体管阵列, 双PNP, 30 V, 250 mW, -100 mA, 220 hFE, SOT-143B
ROHM
晶体管, MOSFET, N沟道, 250 mA, 60 V, 1.7 ohm, 10 V, 2.3 V
ON SEMICONDUCTOR/FAIRCHILD
单晶体管 双极, PNP, -45 V, 100 MHz, 310 mW, -800 mA, 170 hFE
ROHM
晶体管, MOSFET, P沟道, -250 mA, -30 V, 0.9 ohm, -10 V, -2.5 V
VISHAY
功率场效应管, MOSFET, N沟道, 7.9 A, 650 V, 0.52 ohm, 10 V, 2 V
NEXPERIA
双极晶体管阵列, NPN, 45 V, 390 mW, 100 mA, 290 hFE, SOT-143B
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, -3.4 A, -30 V, 0.105 ohm, -10 V, -1.8 V