INFINEON
双路场效应管, MOSFET, 双N沟道, 11 A, 30 V, 0.0098 ohm, 10 V, 1.8 V
INFINEON
晶体管, MOSFET, N沟道, 90 A, 40 V, 0.0019 ohm, 10 V, 3 V
NEXPERIA
单晶体管 双极, 开关, NPN, 40 V, 300 MHz, 200 mW, 600 mA, 100 hFE
MULTICOMP
单晶体管 双极, PNP, 40 V, 200 MHz, 625 mW, 600 mA, 100 hFE
NEXPERIA
晶体管, MOSFET, P沟道, -11.8 A, -12 V, 0.015 ohm, -4.5 V, -680 mV
DIODES INC.
晶体管, MOSFET, P沟道, -2.7 A, -20 V, 100 mohm, -4.5 V, -890 mV
DIODES INC.
晶体管, MOSFET, 增强模式, N沟道, 5.6 A, 60 V, 0.068 ohm, 10 V, 1 V
NEXPERIA
晶体管, MOSFET, N沟道, 120 A, 60 V, 2730 μohm, 5 V, 1.7 V
ROHM
晶体管 双极预偏置/数字, AEC-Q101, 单路NPN, 50 V, 100 mA, 10 kohm
INFINEON
晶体管, MOSFET, N沟道, 100 A, 75 V, 0.0051 ohm, 10 V, 4 V
ON SEMICONDUCTOR
MOSFET Transistor, N Channel, 340 mA, 60 V, 1.19 ohm, 10 V, 1 V
VISHAY
功率场效应管, MOSFET, N沟道, 7 A, 650 V, 0.5 ohm, 10 V, 2 V
INFINEON
晶体管, MOSFET, N沟道, 55 A, 30 V, 0.0062 ohm, 10 V, 2.35 V
DIODES INC.
单晶体管 双极, NPN, 160 V, 155 MHz, 625 mW, 1 A, 450 hFE
VISHAY
晶体管, MOSFET, N沟道, 15 A, 150 V, 77 mohm, 10 V, 2 V
VISHAY
晶体管, MOSFET, P沟道, -110 A, -80 V, 0.0093 ohm, -10 V, -3 V
NEXPERIA
双极晶体管阵列, PNP, -65 V, 380 mW, -100 mA, 290 hFE, SOT-457
ON SEMICONDUCTOR
单晶体管 双极, PNP, -50 V, 690 MHz, 600 mW, -500 mA, 200 hFE
STMICROELECTRONICS
单晶体管 双极, PNP, 60 V, 130 MHz, 1.4 W, -3 A, 160 hFE
ON SEMICONDUCTOR
Dual MOSFET, Dual N Channel, 220 mA, 20 V, 0.75 ohm, 4.5 V, 1 V
ON SEMICONDUCTOR/FAIRCHILD
双路场效应管, MOSFET, 双N沟道, 3 A, 20 V, 70 mohm, 4.5 V, 900 mV
ON SEMICONDUCTOR
MOSFET Transistor, N Channel, 2.2 A, 60 V, 0.107 ohm, 10 V, 2.5 V
NEXPERIA
单晶体管 双极, NPN, 40 V, 300 mW, 1 A, 300 hFE
INFINEON
晶体管, MOSFET, N沟道, 11 A, 30 V, 0.0093 ohm, 10 V, 1.8 V
INFINEON
双路场效应管, MOSFET, 双P沟道, -8 A, -30 V, 0.017 ohm, -10 V, -2.5 V