INFINEON
晶体管, MOSFET, N沟道, 12 A, 60 V, 0.0094 ohm, 10 V, 4.9 V
INFINEON
晶体管, MOSFET, N沟道, 50 A, 30 V, 0.0033 ohm, 10 V, 1.8 V
INFINEON
晶体管, MOSFET, N沟道, 8.5 A, 25 V, 0.01 ohm, 10 V, 1.8 V
DIODES INC.
晶体管, MOSFET, P沟道, 8.2 A, -60 V, 85 mohm, -10 V, -1 V
INFINEON
晶体管, MOSFET, N沟道, 9.3 A, 80 V, 0.0115 ohm, 10 V, 4 V
NEXPERIA
晶体管, MOSFET, P沟道, -1.5 A, -40 V, 0.18 ohm, -10 V, -1.7 V
INFINEON
双路场效应管, MOSFET, 双N沟道, 11 A, 30 V, 0.0086 ohm, 10 V, 2.25 V
ON SEMICONDUCTOR
晶体管 双极预偏置/数字, NPN和PNP执行, 50 V, 100 mA, 10 kohm, 10 kohm, 1 电阻比率
ON SEMICONDUCTOR
晶体管 双极预偏置/数字, NPN和PNP执行, 50 V, 100 mA, 4.7 kohm, 10 kohm, 0.47 电阻比率
INFINEON
晶体管, MOSFET, N沟道, 375 A, 100 V, 0.0028 ohm, 10 V, 2.7 V
NEXPERIA
晶体管, MOSFET, N沟道, 100 A, 25 V, 0.00075 ohm, 10 V, 1.41 V
INFINEON
晶体管, MOSFET, N沟道, 14 A, 30 V, 0.0069 ohm, 10 V, 2.35 V
INFINEON
晶体管, MOSFET, N沟道, 24 A, 30 V, 0.0023 ohm, 10 V, 1.8 V
INFINEON
晶体管, MOSFET, AEC-Q101, N沟道, 187 A, 40 V, 0.0016 ohm, 10 V, 3.9 V
ON SEMICONDUCTOR
单晶体管 双极, NPN, 15 V, 250 MHz, 200 mW, 700 mA, 200 hFE
NEXPERIA
双路场效应管, MOSFET, 双N沟道, 260 mA, 60 V, 2.2 ohm, 10 V, 1.6 V
INFINEON
双路场效应管, MOSFET, 双N沟道, 3.4 A, 20 V, 0.033 ohm, 4.5 V, 800 mV
INFINEON
晶体管, MOSFET, N沟道, 85 A, 60 V, 0.0043 ohm, 10 V, 3.7 V
INFINEON
晶体管, MOSFET, N沟道, 10 A, 80 V, 0.011 ohm, 10 V, 4.9 V
INFINEON
双路场效应管, MOSFET, 双N沟道, 10 A, 12 V, 0.0115 ohm, 4.5 V, 2 V
INFINEON
晶体管, MOSFET, N沟道, 35 A, 100 V, 0.0137 ohm, 10 V, 3.6 V
ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 361 mA, 20 V, 0.5 ohm, 4.5 V, 1 V
INFINEON
晶体管, MOSFET, N沟道, 40 A, 25 V, 0.005 ohm, 10 V, 2 V
ON SEMICONDUCTOR
单晶体管 双极, NPN, 45 V, 300 MHz, 225 mW, 100 mA, 200 hFE
INFINEON
晶体管, MOSFET, N沟道, 3.1 A, 55 V, 65 mohm, 10 V, 2 V