ON SEMICONDUCTOR/FAIRCHILD
单晶体管 双极, PNP, -300 V, 50 MHz, 350 mW, -500 mA, 25 hFE
VISHAY
晶体管, MOSFET, N沟道, 2.7 A, 150 V, 0.068 ohm, 10 V, 2 V
INFINEON
晶体管, MOSFET, N沟道, 40 A, 100 V, 0.013 ohm, 10 V, 1.7 V
NEXPERIA
晶体管, MOSFET, N沟道, 56 A, 60 V, 0.0103 ohm, 10 V, 1.7 V
ON SEMICONDUCTOR
单晶体管 双极, 双NPN, 45 V, 100 MHz, 380 mW, 100 mA, 270 hFE
DIODES INC.
晶体管, MOSFET, N沟道, 200 mA, 100 V, 10 ohm, 10 V, 2.4 V
NEXPERIA
双路场效应管, MOSFET, 双N沟道, 590 mA, 30 V, 0.55 ohm, 4.5 V, 700 mV
INFINEON
晶体管, MOSFET, N沟道, 7 A, 200 V, 0.194 ohm, 10 V, 3 V
VISHAY
双路场效应管, MOSFET, N和P沟道, 600 mA, 20 V, 0.33 ohm, 4.5 V, 400 mV
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 115 mA, 60 V, 1.6 ohm, 5 V, 1.76 V
INFINEON
场效应管, MOSFET, 双路, N沟道, 20V, 0.88A, SOT-363-6
ROHM
晶体管 双极预偏置/数字, AEC-Q101, NPN和PNP执行, 50 V, 100 mA, 10 kohm, 47 kohm
INFINEON
双路场效应管, MOSFET, 双N沟道, 6.6 A, 20 V, 0.023 ohm, 4.5 V, 700 mV
VISHAY
晶体管, MOSFET, P沟道, 1.6 A, -20 V, 0.065 ohm, 10 V, -1.5 V
INFINEON
双路场效应管, MOSFET, N和P沟道, 4 A, 30 V, 50 mohm, 10 V, 1 V
DIODES INC.
单晶体管 双极, NPN, 45 V, 100 MHz, 150 mW, 100 mA, 520 hFE
INFINEON
晶体管, MOSFET, N沟道, 46 A, 100 V, 0.0144 ohm, 10 V, 3.7 V
INFINEON
晶体管, MOSFET, N沟道, 100 A, 75 V, 0.0037 ohm, 10 V, 3.1 V
DIODES INC.
晶体管, MOSFET, N沟道, 600 mA, 60 V, 1.5 ohm, 10 V, 3 V
INFINEON
晶体管, MOSFET, P沟道, -40 A, -30 V, 0.009 ohm, -10 V, -2.5 V
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, -13 A, -30 V, 0.0073 ohm, -10 V, -1.6 V
ON SEMICONDUCTOR/FAIRCHILD
双路场效应管, MOSFET, 双N沟道, 6.5 A, 20 V, 0.025 ohm, 4.5 V, 1 V
INFINEON
双路场效应管, MOSFET, N和P沟道, 5.2 A, 20 V, 0.05 ohm, 4.5 V, 700 mV
INFINEON
晶体管, MOSFET, N沟道, 29 A, 30 V, 0.0094 ohm, 10 V, 1.8 V
INFINEON
晶体管, MOSFET, N沟道, 375 A, 100 V, 0.0028 ohm, 10 V, 2.7 V