TEXAS INSTRUMENTS
双极晶体管阵列, 达林顿, NPN, 50 V, 500 mA, TSSOP
TEXAS INSTRUMENTS
晶体管, MOSFET, P沟道, -5.4 A, -12 V, 0.029 ohm, -4.5 V, -650 mV
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, -49 A, -30 V, 0.0027 ohm, -10 V, -1.7 V
ON SEMICONDUCTOR/FAIRCHILD
单晶体管 双极, NPN, 300 V, 15 W, 500 mA, 30 hFE
ON SEMICONDUCTOR/FAIRCHILD
单晶体管 双极, PNP, -60 V, 200 MHz, 350 mW, -800 mA, 100 hFE
INFINEON
晶体管, MOSFET, P沟道, -3.7 A, -20 V, 0.05 ohm, -4.5 V, -550 mV
INFINEON
双路场效应管, MOSFET, N和P沟道, 4.7 A, 55 V, 50 mohm, 10 V, 1 V
INFINEON
晶体管, MOSFET, N沟道, 68 A, 80 V, 0.0076 ohm, 10 V, 4.9 V
INFINEON
晶体管, MOSFET, N沟道, 17 A, 100 V, 0.09 ohm, 10 V, 4 V
INFINEON
晶体管 双极-射频, NPN, 6 V, 14 GHz, 380 mW, 80 mA, 90 hFE
NEXPERIA
晶体管, MOSFET, N沟道, 300 mA, 60 V, 1 ohm, 10 V, 1.6 V
INFINEON
双路场效应管, MOSFET, 双P沟道, -9 A, -20 V, 0.018 ohm, -4.5 V, -1 V
MULTICOMP
单晶体管 双极, NPN, 30 V, 250 MHz, 625 mW, 100 mA, 500 hFE
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, 1.1 A, -30 V, 300 mohm, -10 V, -2 V
INFINEON
晶体管, MOSFET, N沟道, 40 A, 30 V, 0.0033 ohm, 10 V, 2 V
NEXPERIA
双路场效应管, MOSFET, 双P沟道, -410 mA, -30 V, 1.2 ohm, -4.5 V, -700 mV
INFINEON
晶体管, MOSFET, N沟道, 35 A, 150 V, 29 mohm, 10 V, 4 V
VISHAY
晶体管, MOSFET, P沟道, -190 mA, -60 V, 4 ohm, -4.5 V, -3 V
DIODES INC.
单晶体管 双极, PNP, -150 V, 300 MHz, 300 mW, -600 mA, 60 hFE
INFINEON
晶体管, MOSFET, P沟道, -6 A, -20 V, 0.029 ohm, -4.5 V, -900 mV
INFINEON
晶体管, MOSFET, N沟道, 40 A, 100 V, 0.014 ohm, 10 V, 2.8 V
INFINEON
晶体管, MOSFET, N沟道, 100 A, 30 V, 0.0016 ohm, 10 V, 2 V
ON SEMICONDUCTOR
单晶体管 双极, 通用, NPN, 80 V, 150 MHz, 225 mW, 500 mA, 150 hFE
VISHAY
晶体管, MOSFET, P沟道, -350 mA, -20 V, 0.8 ohm, -1.8 V, -450 mV
ON SEMICONDUCTOR
晶体管 双极预偏置/数字, BRT, 单路NPN, 50 V, 100 mA, 47 kohm, 47 kohm, 1 电阻比率