VISHAY
晶体管, MOSFET, P沟道, -35 A, -30 V, 0.0058 ohm, -10 V, -1.2 V
VISHAY
晶体管, MOSFET, N沟道, 21 A, 100 V, 0.027 ohm, 10 V, 1.5 V
INFINEON
晶体管, MOSFET, N沟道, 40 A, 40 V, 8.1 mohm, 10 V, 1.2 V
INFINEON
晶体管, MOSFET, N沟道, 28 A, 150 V, 0.047 ohm, 10 V, 5 V
VISHAY
双路场效应管, MOSFET, 双N沟道, 700 mA, 20 V, 0.32 ohm, 4.5 V, 1.5 V
ON SEMICONDUCTOR
单晶体管 双极, PNP, -80 V, 50 MHz, 225 mW, -500 mA, 100 hFE
INFINEON
晶体管, MOSFET, N沟道, 40 A, 30 V, 0.0018 ohm, 10 V, 2 V
ON SEMICONDUCTOR
单晶体管 双极, PNP, -300 V, 50 MHz, 225 mW, -500 mA, 25 hFE
ON SEMICONDUCTOR
晶体管 双极预偏置/数字, NPN和PNP执行, 50 V, 100 mA, 10 kohm, 47 kohm, 0.21 电阻比率
NEXPERIA
晶体管, MOSFET, N沟道, 100 A, 60 V, 0.004 ohm, 10 V, 1.7 V
ON SEMICONDUCTOR
晶体管, MOSFET, P沟道, -3.7 A, -8 V, 52 mohm, -4.5 V, -1 V
ON SEMICONDUCTOR
MOSFET Transistor, N Channel, 238 mA, 20 V, 1.5 ohm, 4.5 V, 1 V
TEXAS INSTRUMENTS
双极晶体管阵列, 达林顿, NPN, 50 V, 500 mA, 1000 hFE, SOIC
INFINEON
场效应管, MOSFET, N沟道, 60V, 0.23A, SOT-23-3
ON SEMICONDUCTOR
双极晶体管阵列, 双NPN, 45 V, 500 μW, 500 mA, 40 hFE, SC-74
INFINEON
晶体管, MOSFET, AEC-Q101, N沟道, 24 A, 100 V, 0.026 ohm, 10 V, 4 V
NEXPERIA
单晶体管 双极, NPN, 45 V, 180 MHz, 500 mW, 1 A, 63 hFE
INFINEON
晶体管, MOSFET, N沟道, 24 A, 200 V, 0.042 ohm, 10 V, 3 V
DIODES INC.
单晶体管 双极, NPN, 100 V, 175 MHz, 2 W, 2 A, 200 hFE
INFINEON
晶体管, MOSFET, P沟道, -6.2 A, -40 V, 0.025 ohm, -10 V, -3 V
ON SEMICONDUCTOR/FAIRCHILD
单晶体管 双极, 通用, NPN, 30 V, 220 MHz, 350 mW, 1.2 A, 20000 hFE
VISHAY
晶体管, MOSFET, P沟道, -38 A, -100 V, 0.036 ohm, -10 V, -3 V
ON SEMICONDUCTOR
双极晶体管阵列, 通用, NPN, PNP, 40 V, 150 mW, 200 mA, 250 hFE, SOT-363
ON SEMICONDUCTOR
单晶体管 双极, 通用, PNP, -150 V, 300 MHz, 225 mW, -500 mA, 100 hFE
NEXPERIA
晶体管 双极预偏置/数字, 单路NPN, 50 V, 100 mA, 2.2 kohm, 2.2 kohm