DIODES INC.
晶体管, MOSFET, 增强模式, P沟道, -4.6 A, -30 V, 0.07 ohm, -10 V, -1 V
INFINEON
晶体管, MOSFET, N沟道, 44 A, 120 V, 0.0166 ohm, 10 V, 3 V
INFINEON
双路场效应管, MOSFET, 双N沟道, 20 A, 55 V, 0.039 ohm, 10 V, 1.6 V
INFINEON
晶体管, MOSFET, N沟道, 100 A, 80 V, 0.0026 ohm, 10 V, 3 V
VISHAY
双路场效应管, MOSFET, 双N沟道, 5.3 A, 60 V, 46 mohm, 10 V, 2.5 V
ON SEMICONDUCTOR
双极晶体管阵列, 双NPN, 40 V, 350 mW, 200 mA, 30 hFE, SOT-963
NXP
晶体管, 射频FET, 7 V, 30 mA, 200 mW, 40 MHz, 3 GHz, SOT-143B
NEXPERIA
晶体管, MOSFET, N沟道, 300 mA, 250 V, 2.8 ohm, 10 V, 2 V
NEXPERIA
晶体管, MOSFET, P沟道, -2.4 A, -30 V, 0.1 ohm, -10 V, -1.5 V
INFINEON
晶体管, MOSFET, AEC-Q101, N沟道, 14.4 A, 100 V, 0.051 ohm, 10 V, 4 V
INFINEON
晶体管, MOSFET, N沟道, 25 A, 250 V, 0.05 ohm, 10 V, 3 V
VISHAY
双路场效应管, MOSFET, N和P沟道, 4.5 A, 20 V, 0.053 ohm, 4.5 V, 600 mV
INFINEON
晶体管, MOSFET, N沟道, 73 A, 40 V, 4.9 mohm, 10 V, 1.2 V
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 16 A, 60 V, 47 mohm, 5 V, 3 V
NEXPERIA
双极晶体管阵列, 通用, NPN, 45 V, 200 mW, 100 mA, 180 hFE, SOT-323
VISHAY
晶体管, MOSFET, P沟道, -2.5 A, -30 V, 0.063 ohm, -10 V, -3 V
STMICROELECTRONICS
晶体管, MOSFET, N沟道, 2 A, 100 V, 0.23 ohm, 10 V, 4 V
ON SEMICONDUCTOR
晶体管, MOSFET, P沟道, -3 A, -12 V, 0.064 ohm, -4.5 V, -1.3 V
INFINEON
晶体管, MOSFET, P沟道, 16 A, -12 V, 7 mohm, -4.5 V, -900 mV
STMICROELECTRONICS
晶体管, MOSFET, N沟道, 1.5 A, 60 V, 0.07 ohm, 20 V, 3 V
INFINEON
晶体管 双极-射频, NPN, 16 V, 5 GHz, 700 mW, 210 mA, 70 hFE
INFINEON
晶体管, MOSFET, N沟道, 50 A, 60 V, 0.0062 ohm, 10 V, 3 V
ON SEMICONDUCTOR/FAIRCHILD
双路场效应管, MOSFET, N和P沟道, 3.7 A, 30 V, 0.06 ohm, 10 V, 1.7 V
INFINEON
晶体管, MOSFET, AEC-Q101, N沟道, 58 A, 40 V, 0.005 ohm, 10 V, 1.8 V
INFINEON
晶体管, MOSFET, N沟道, 213 A, 25 V, 0.0008 ohm, 10 V, 1.6 V