TOSHIBA
晶体管, MOSFET, P沟道, -18 A, -30 V, 0.0026 ohm, -10 V, -800 mV
VISHAY
晶体管, MOSFET, N沟道, 200 mA, 20 V, 5 ohm, 4.5 V, 700 mV
ON SEMICONDUCTOR/FAIRCHILD
双路场效应管, MOSFET, 双N沟道, 4.7 A, 80 V, 0.034 ohm, 10 V, 2.3 V
INFINEON
双路场效应管, MOSFET, 双N沟道, 20 A, 40 V, 0.007 ohm, 10 V, 3 V
INFINEON
晶体管, MOSFET, N沟道, 40 A, 40 V, 0.0027 ohm, 10 V, 2 V
ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 200 mA, 50 V, 3.5 ohm, 5 V, 1.5 V
INFINEON
晶体管 双极-射频, 双NPN, 12 V, 8 GHz, 175 mW, 20 mA, 70 hFE
ROHM
晶体管 双极预偏置/数字, 单路NPN, 50 V, 100 mA, 10 kohm, 10 kohm
NEXPERIA
双路场效应管, MOSFET, 双N沟道, 300 mA, 60 V, 0.78 ohm, 10 V, 2 V
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 5.5 A, 30 V, 0.023 ohm, 10 V, 1.4 V
INFINEON
晶体管 双极-射频, NPN, 12 V, 8 GHz, 250 mW, 35 mA, 70 hFE
NEXPERIA
单晶体管 双极, 通用, NPN, 160 V, 300 MHz, 250 mW, 300 mA, 80 hFE
INFINEON
双路场效应管, MOSFET, 双N沟道, 40 A, 25 V, 0.0009 ohm, 10 V, 1.6 V
INFINEON
晶体管, MOSFET, N沟道, 80 A, 30 V, 0.0042 ohm, 10 V, 2.2 V
INFINEON
晶体管, MOSFET, N沟道, 40 A, 60 V, 0.0085 ohm, 10 V, 2.8 V
INFINEON
晶体管, MOSFET, N沟道, 10.9 A, 250 V, 0.146 ohm, 10 V, 3 V
INFINEON
晶体管, MOSFET, N沟道, 100 A, 40 V, 0.0018 ohm, 10 V, 2 V
INFINEON
晶体管, MOSFET, N沟道, 40 A, 25 V, 0.0015 ohm, 10 V, 2 V
INFINEON
双路场效应管, MOSFET, N和P沟道, 6.5 A, 30 V, 29 mohm, 10 V, 1 V
VISHAY
晶体管, MOSFET, N沟道, 30 A, 30 V, 0.0024 ohm, 10 V, 1 V
NEXPERIA
双路场效应管, MOSFET, N和P沟道, 600 mA, 20 V, 0.47 ohm, 4.5 V, 700 mV
INFINEON
晶体管, MOSFET, N沟道, 40 A, 80 V, 0.0062 ohm, 10 V, 3 V
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, -1 A, -100 V, 820 mohm, -10 V, -4 V
INFINEON
晶体管, MOSFET, N沟道, 40 A, 40 V, 0.002 ohm, 10 V, 2 V
INFINEON
晶体管, MOSFET, N沟道, 180 A, 30 V, 0.00122 ohm, 10 V, 1.8 V