产品分类：晶体管,规格：MSL MSL 1 -无限制,
STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 4 A, 600 V, 2 ohm, 10 V, 2.3 V
(EN)VISHAY
晶体管, MOSFET, N沟道, 3.3 A, 500 V, 3 ohm, 10 V, 4.5 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 42 A, 100 V, 0.011 ohm, 10 V, 1 V
(EN)
DIODES INC.
单晶体管 双极, NPN, 45 V, 310 mW, 500 mA, 250 hFE
(EN)INFINEON
晶体管, MOSFET, N沟道, 42 A, 40 V, 0.00823 ohm, 10 V, 4 V
(EN)
ROHM
晶体管 双极预偏置/数字, AEC-Q101, 单路NPN, 50 V, 100 mA, 47 kohm, 47 kohm, 1 电阻比率
(EN)
VISHAY
晶体管, MOSFET, P沟道, -40 A, -30 V, 0.0074 ohm, -4.5 V, -1.2 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 5 A, 30 V, 35 mohm, 10 V, 1.7 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管 双极-射频, PNP, 20 V, 600 MHz, 225 mW, -50 mA, 60 hFE
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 2.7 A, 30 V, 46 mohm, 10 V, 1.6 V
(EN)
ON SEMICONDUCTOR
单晶体管 双极, NPN, 30 V, 125 MHz, 225 mW, 300 mA, 10000 hFE
(EN)
ON SEMICONDUCTOR
单晶体管 双极, NPN, 45 V, 100 MHz, 300 mW, 500 mA, 160 hFE
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, 3.4 A, -30 V, 0.105 ohm, -10 V, -1.8 V
(EN)
INFINEON
晶体管 双极-射频, NPN, 4.5 V, 25 GHz, 75 mW, 25 mA, 60 hFE
(EN)
ON SEMICONDUCTOR
单晶体管 双极, 达林顿, PNP, -100 V, 1.75 W, -8 A, 12 hFE
(EN)
INFINEON
晶体管 双极-射频, AEC-Q101, NPN, 9 V, 14 GHz, 210 mW, 35 mA, 120 hFE
(EN)
NEXPERIA
晶体管 双极预偏置/数字, BRT, NPN和PNP执行, 50 V, 100 mA, 22 kohm, 22 kohm
(EN)
INFINEON
晶体管, MOSFET, N沟道, 71 A, 100 V, 10 mohm, 10 V, 1.85 V
(EN)
VISHAY
双路场效应管, MOSFET, 双P沟道, -8 A, -30 V, 24 mohm, -10 V, -3 V
(EN)ON SEMICONDUCTOR
双极晶体管阵列, 双路N和P通道, 30 V, 380 mW, 100 mA, 420 hFE, SOT-363
(EN)INFINEON
晶体管, MOSFET, N沟道, 14 A, 150 V, 0.18 ohm, 10 V, 5.5 V
(EN)INFINEON
晶体管, MOSFET, P沟道, -6.6 A, -100 V, 480 mohm, -10 V, -4 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 43 A, 60 V, 0.0126 ohm, 10 V, 4 V
(EN)
NEXPERIA
单晶体管 双极, NPN, PNP, 65 V, 100 MHz, 200 mW, 100 mA, 200 hFE
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 57 A, 100 V, 0.013 ohm, 10 V, 3 V
(EN)
