产品分类：晶体管,规格：MSL MSL 1 -无限制,
TOSHIBA
晶体管, MOSFET, N沟道, 400 mA, 30 V, 700 mohm, 10 V, 1.8 V
(EN)
ON SEMICONDUCTOR
晶体管 双极预偏置/数字, BRT, NPN和PNP执行, 50 V, 100 mA, 10 kohm, 47 kohm, 4.7 电阻比率
(EN)
ON SEMICONDUCTOR
双路场效应管, MOSFET, 双N沟道, 4.1 A, 20 V, 0.06 ohm, 4.5 V, 1.2 V
(EN)
ON SEMICONDUCTOR
单晶体管 双极, NPN, 65 V, 100 MHz, 225 mW, 100 mA, 110 hFE
(EN)
NEXPERIA
单晶体管 双极, 通用, PNP, -45 V, 80 MHz, 250 mW, -500 mA, 250 hFE
(EN)
ROHM
单晶体管 双极, NPN, 11 V, 3.2 GHz, 150 mW, 10 mA, 56 hFE
(EN)
ON SEMICONDUCTOR
Dual MOSFET, N and P Complement, 220 mA, 20 V, 0.75 ohm, 4.5 V, 1 V
(EN)
ON SEMICONDUCTOR
晶体管 双极预偏置/数字, 单路NPN, 50 V, 100 mA, 10 kohm, 10 kohm, 1 电阻比率
(EN)
ROHM
晶体管, MOSFET, N沟道, 2 A, 60 V, 250 mohm, 4 V, 800 mV
(EN)ON SEMICONDUCTOR
单晶体管 双极, NPN, 12 V, 150 MHz, 540 mW, 2 A, 200 hFE
(EN)
ON SEMICONDUCTOR
晶体管 双极预偏置/数字, 单路NPN, 50 V, 100 mA, 47 kohm, 47 kohm, 1 电阻比率
(EN)ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 170 mA, 100 V, 6 ohm, 10 V, 2.6 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 30 A, 30 V, 0.0112 ohm, 10 V, 1.5 V
(EN)
VISHAY
晶体管, MOSFET, P沟道, -1.4 A, -150 V, 0.61 ohm, -10 V, -4 V
(EN)
VISHAY
双路场效应管, MOSFET, N和P沟道, 700 mA, 30 V, 0.323 ohm, 10 V, 1.2 V
(EN)
INFINEON
晶体管, MOSFET, P沟道, -760 mA, -30 V, 0.6 ohm, -10 V, -1 V
(EN)
WEEN SEMICONDUCTOR
单晶体管 双极, NPN, 400 V, 2.1 W, 1.5 A, 17 hFE
(EN)
ON SEMICONDUCTOR
晶体管 双极预偏置/数字, 单路NPN, 50 V, 100 mA, 10 kohm, 10 kohm, 1 电阻比率
(EN)ROHM
单晶体管 双极, NPN, 50 V, 180 MHz, 200 mW, 150 mA, 180 hFE
(EN)
ON SEMICONDUCTOR/FAIRCHILD
单晶体管 双极, 通用, NPN, 100 V, 20 W, 8 A, 1000 hFE
(EN)
NEXPERIA
晶体管 双极预偏置/数字, 单路PNP, -50 V, -100 mA, 10 kohm, 10 kohm
(EN)DIODES INC.
晶体管, MOSFET, N沟道, 310 mA, 60 V, 2 ohm, 10 V, 2 V
(EN)
INFINEON
晶体管, MOSFET, P沟道, -18.6 A, -60 V, 0.1 ohm, -10 V, -3 V
(EN)ON SEMICONDUCTOR
单晶体管 双极, 通用, NPN, 40 V, 300 MHz, 225 mW, 200 mA, 300 hFE
(EN)
INFINEON
晶体管, MOSFET, N沟道, 79 A, 60 V, 0.0071 ohm, 10 V, 2 V
(EN)
