ON SEMICONDUCTOR
Bipolar (BJT) Single Transistor, PNP, -45 V, 100 MHz, 460 mW, -500 mA, 40 hFE
INFINEON
晶体管, MOSFET, P沟道, -600 mA, -30 V, 600 mohm, -10 V, -1 V
INFINEON
晶体管 双极-射频, AEC-Q101, NPN, 12 V, 8 GHz, 175 mW, 20 mA, 100 hFE
ON SEMICONDUCTOR
晶体管 双极预偏置/数字, AEC-Q100, 双路 PNP, -50 V, -100 mA, 10 kohm, 10 kohm, 1 电阻比率
ON SEMICONDUCTOR/FAIRCHILD
双路场效应管, MOSFET, 双P沟道, -7 A, -30 V, 23 mohm, -10 V, -1.6 V
NEXPERIA
晶体管 双极预偏置/数字, BRT, 单路PNP, -50 V, -100 mA, 4.7 kohm, 4.7 kohm, 1 电阻比率
ROHM
晶体管 双极预偏置/数字, AEC-Q101, 单路NPN, 50 V, 100 mA, 4.7 kohm, 47 kohm, 0.1 电阻比率
NEXPERIA
单晶体管 双极, 通用, NPN, 45 V, 100 MHz, 250 mW, 100 mA, 200 hFE
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, -8.8 A, -30 V, 15 mohm, -10 V, -1.7 V
NEXPERIA
晶体管, MOSFET, P沟道, -410 mA, -30 V, 1.2 ohm, -4.5 V, -700 mV
DIODES INC.
单晶体管 双极, NPN, 45 V, 100 MHz, 150 mW, 100 mA, 110 hFE
ON SEMICONDUCTOR
Bipolar (BJT) Single Transistor, PNP, -45 V, 100 MHz, 225 mW, -500 mA, 40 hFE
INFINEON
晶体管, MOSFET, N沟道, 1.4 A, 20 V, 0.107 ohm, 2.5 V, 550 mV
MULTICOMP
单晶体管 双极, 通用, NPN, 45 V, 200 MHz, 800 mW, 1 A, 100 hFE
NEXPERIA
晶体管 双极预偏置/数字, BRT, NPN和PNP执行, 50 V, 100 mA, 10 kohm, 10 kohm
NEXPERIA
单晶体管 双极, 通用, NPN, 65 V, 100 MHz, 200 mW, 100 mA, 200 hFE
NEXPERIA
单晶体管 双极, 通用, PNP, 30 V, 250 mW, 100 mA, 220 hFE
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, 7.3 A, -30 V, 0.026 ohm, -10 V, 1.5 V
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 12 A, 60 V, 0.18 ohm, 5 V, 1.5 V
ON SEMICONDUCTOR
晶体管, MOSFET, P沟道, -1.3 A, -20 V, 140 mohm, -4.5 V, -1 V
INFINEON
晶体管, MOSFET, N沟道, 2.7 A, 60 V, 0.078 ohm, 10 V, 2.5 V
NEXPERIA
单晶体管 双极, 通用, NPN, 65 V, 100 MHz, 250 mW, 100 mA, 200 hFE
DIODES INC.
单晶体管 双极, NPN, 45 V, 300 MHz, 300 mW, 100 mA, 600 hFE
ON SEMICONDUCTOR/FAIRCHILD
单晶体管 双极, NPN, 400 V, 625 mW, 300 mA, 40 hFE
ON SEMICONDUCTOR/FAIRCHILD
单晶体管 双极, NPN, 50 V, 700 MHz, 350 mW, 500 mA, 250 hFE