产品分类：晶体管,规格：MSL MSL 1 -无限制,
ROHM
晶体管 双极预偏置/数字, AEC-Q101, 单路PNP, -50 V, -100 mA, 4.7 kohm, 10 kohm, 0.47 电阻比率
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, 20 A, -30 V, 0.0038 ohm, -10 V, 1.8 V
(EN)
ROHM
晶体管 双极预偏置/数字, AEC-Q101, 双路 NPN, 50 V, 100 mA, 10 kohm, 10 kohm
(EN)ON SEMICONDUCTOR
双极晶体管阵列, NPN, PNP, 45 V, 380 mW, 100 mA, 200 hFE, SOT-363
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 260 mA, 60 V, 1 ohm, 10 V, 2.6 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 8 A, 60 V, 20 mohm, 10 V, 2.5 V
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, P沟道, -281 mA, -20 V, 0.9 ohm, -4.5 V, -1 V
(EN)ROHM
晶体管 双极预偏置/数字, AEC-Q101, 单路NPN, 50 V, 100 mA, 4.7 kohm
(EN)
VISHAY
双路场效应管, MOSFET, 双N沟道, 6.5 A, 60 V, 0.033 ohm, 20 V, 2.4 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
双路场效应管, MOSFET, N和P沟道, 9 A, 40 V, 0.019 ohm, 10 V, 1.7 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
双路场效应管, MOSFET, 双N沟道, 6 A, 30 V, 0.019 ohm, 10 V, 1.9 V
(EN)
MULTICOMP
单晶体管 双极, NPN, 45 V, 200 MHz, 350 mW, 100 mA, 290 hFE
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 1.5 A, 20 V, 0.17 ohm, 4.5 V, 700 mV
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 3 A, 60 V, 100 mohm, 10 V, 3 V
(EN)
ON SEMICONDUCTOR
单晶体管 双极, PNP, -12 V, 625 mW, -1 A, 80 hFE
(EN)ROHM
晶体管 双极预偏置/数字, AEC-Q101, 单路NPN, 50 V, 100 mA, 4.7 kohm, 10 kohm, 0.47 电阻比率
(EN)
ON SEMICONDUCTOR/FAIRCHILD
双路场效应管, MOSFET, N和P沟道, 340 mA, 50 V, 1 ohm, 10 V, 2.1 V
(EN)ON SEMICONDUCTOR
晶体管, MOSFET, P沟道, -780 mA, -20 V, 0.38 ohm, -4.5 V, -1.2 V
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 930 mA, 30 V, 0.38 ohm, 4.5 V, 1 V
(EN)NEXPERIA
晶体管, MOSFET, N沟道, 1.75 A, 100 V, 0.2 ohm, 10 V, 3 V
(EN)ROHM
晶体管 双极预偏置/数字, AEC-Q101, 单路NPN, 50 V, 100 mA, 22 kohm, 47 kohm, 0.46 电阻比率
(EN)
INFINEON
射频晶体管, NPN, 12V, SOT-23
(EN)
ON SEMICONDUCTOR
晶体管 双极预偏置/数字, AEC-Q101, 单路NPN, 50 V, 100 mA, 4.7 kohm, 47 kohm, 0.1 电阻比率
(EN)DIODES INC.
晶体管, MOSFET, P沟道, -4.2 A, -20 V, 0.04 ohm, -4.5 V, -900 mV
(EN)ON SEMICONDUCTOR/FAIRCHILD
双路场效应管, MOSFET, 双N沟道, 2.5 A, 30 V, 0.082 ohm, 10 V, 1.8 V
(EN)
