产品分类：晶体管,规格：MSL MSL 1 -无限制,
INFINEON
晶体管 双极-射频, AEC-Q101, NPN, 12 V, 8 GHz, 450 mW, 65 mA, 100 hFE
(EN)ON SEMICONDUCTOR
单晶体管 双极, 通用, PNP, -30 V, 100 MHz, 225 mW, -100 mA, 100 hFE
(EN)
NEXPERIA
双路场效应管, MOSFET, 双N沟道, 200 mA, 20 V, 0.28 ohm, 4.5 V, 700 mV
(EN)
INFINEON
晶体管, MOSFET, N沟道, 1.5 A, 20 V, 0.106 ohm, 4.5 V, 950 mV
(EN)
ON SEMICONDUCTOR/FAIRCHILD
双路场效应管, MOSFET, 双N沟道, 2.7 A, 20 V, 80 mohm, 4.5 V, 900 mV
(EN)
ON SEMICONDUCTOR/FAIRCHILD
单晶体管 双极, NPN, 40 V, 300 MHz, 625 mW, 1 A, 35 hFE
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, 4.5 A, -20 V, 0.037 ohm, 12 V, -800 mV
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 400 mA, 60 V, 1.2 ohm, 10 V, 2.1 V
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 320 mA, 60 V, 0.9 ohm, 10 V, 1.2 V
(EN)
ON SEMICONDUCTOR
单晶体管 双极, 通用, NPN, 140 V, 225 mW, 600 mA, 250 hFE
(EN)
STMICROELECTRONICS
晶体管, MOSFET, N沟道, 35 A, 60 V, 0.022 ohm, 2.5 V, 1.7 V
(EN)ON SEMICONDUCTOR
单晶体管 双极, 通用, NPN, 45 V, 100 MHz, 300 mW, 100 mA, 100 hFE
(EN)
ON SEMICONDUCTOR
晶体管 双极预偏置/数字, NPN和PNP执行, 50 V, 100 mA, 2.2 kohm, 47 kohm, 0.047 电阻比率
(EN)
INFINEON
晶体管, MOSFET, N沟道, 100 A, 25 V, 0.00075 ohm, 10 V, 2.2 V
(EN)DIODES INC.
单晶体管 双极, PNP, -30 V, 200 MHz, 300 mW, -100 mA, 330 hFE
(EN)ON SEMICONDUCTOR
双极晶体管阵列, 双NPN, 30 V, 380 mW, 100 mA, 420 hFE, SOT-363
(EN)NEXPERIA
双路场效应管, MOSFET, 双N沟道, 200 mA, 20 V, 0.29 ohm, 4.5 V, 1 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 5 A, 30 V, 0.043 ohm, 10 V, 1.6 V
(EN)
ON SEMICONDUCTOR
晶体管 双极预偏置/数字, 单路NPN, 50 V, 100 mA, 100 kohm, 100 kohm, 1 电阻比率
(EN)ON SEMICONDUCTOR
单晶体管 双极, NPN, 40 V, 250 MHz, 265 mW, 600 mA, 20 hFE
(EN)ON SEMICONDUCTOR
单晶体管 双极, NPN, 65 V, 100 MHz, 265 mW, 100 mA, 200 hFE
(EN)
ON SEMICONDUCTOR
晶体管 双极预偏置/数字, NPN和PNP执行, 50 V, 100 mA, 10 kohm, 47 kohm, 0.21 电阻比率
(EN)
NEXPERIA
晶体管 双极预偏置/数字, BRT, 单路NPN, 50 V, 100 mA, 47 kohm, 47 kohm, 1 电阻比率
(EN)
ON SEMICONDUCTOR
晶体管 双极预偏置/数字, NPN和PNP执行, 50 V, 100 mA, 4.7 kohm, 47 kohm, 0.1 电阻比率
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, P沟道, -100 mA, -30 V, 8 ohm, -4 V, -1.4 mV
(EN)
