产品分类：晶体管,规格：MSL MSL 1 -无限制,
TOSHIBA
晶体管, MOSFET, N沟道, 100 mA, 20 V, 3 ohm, 4 V, 1.1 V
(EN)
VISHAY
晶体管, MOSFET, P沟道, -3 A, -12 V, 0.04 ohm, -4.5 V, -900 mV
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 6.3 A, 30 V, 0.021 ohm, 10 V, 1.9 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
单晶体管 双极, NPN, 45 V, 300 MHz, 500 mW, 100 mA, 110 hFE
(EN)ON SEMICONDUCTOR
单晶体管 双极, NPN, 45 V, 225 mW, 500 mA, 40 hFE
(EN)
NEXPERIA
单晶体管 双极, AEC-Q101, PNP, -60 V, 100 MHz, 250 mW, -100 mA, 220 hFE
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 12 A, 60 V, 0.089 ohm, 5 V, 1.6 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, 8 A, -20 V, 24 mohm, -4.5 V, -700 mV
(EN)
NEXPERIA
晶体管, MOSFET, P沟道, -410 mA, -30 V, 1.2 ohm, -4.5 V, -700 mV
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, 1.6 A, -20 V, 130 mohm, -4.5 V, -800 mV
(EN)
INFINEON
晶体管 双极-射频, NPN, 4 V, 47 GHz, 160 mW, 40 mA, 160 hFE
(EN)INFINEON
晶体管, MOSFET, P沟道, -2.3 A, -30 V, 0.135 ohm, -10 V, -1.3 V
(EN)
ON SEMICONDUCTOR
双极晶体管阵列, AEC-Q101, NPN, PNP, 45 V, 500 mW, 100 mA, 200 hFE, SOT-563
(EN)MULTICOMP
单晶体管 双极, NPN, 45 V, 100 MHz, 625 mW, 500 mA, 400 hFE
(EN)ON SEMICONDUCTOR
单晶体管 双极, NPN, 45 V, 100 MHz, 225 mW, 100 mA, 420 hFE
(EN)
ON SEMICONDUCTOR
双极性晶体管, NPN, 双路, 40V, SOT3
(EN)
ON SEMICONDUCTOR
晶体管 双极预偏置/数字, 单路NPN, 50 V, 100 mA, 4.7 kohm
(EN)ON SEMICONDUCTOR
单晶体管 双极, PNP, -45 V, 100 MHz, 225 mW, -500 mA, 160 hFE
(EN)
ON SEMICONDUCTOR/FAIRCHILD
双路场效应管, MOSFET, 双N沟道, 30 A, 30 V, 0.0058 ohm, 10 V, 2 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
单晶体管 双极, NPN, 30 V, 50 MHz, 350 mW, 100 mA, 300 hFE
(EN)ON SEMICONDUCTOR/FAIRCHILD
单晶体管 双极, NPN, 45 V, 125 MHz, 350 mW, 200 mA, 250 hFE
(EN)
ON SEMICONDUCTOR
晶体管 双极预偏置/数字, 单路NPN, 50 V, 100 mA, 10 kohm, 47 kohm, 0.21 电阻比率
(EN)
ON SEMICONDUCTOR
晶体管 双极预偏置/数字, 双路 NPN, 50 V, 100 mA, 4.7 kohm, 47 kohm, 0.1 电阻比率
(EN)INFINEON
晶体管, MOSFET, N沟道, 110 mA, 240 V, 7.7 ohm, 10 V, 1.4 V
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 33 A, 100 V, 38.6 mohm, 10 V, 1.5 V
(EN)
