产品分类：晶体管,品牌：STMICROELECTRONICS,规格：MSL -,
STMICROELECTRONICS
单晶体管, IGBT, 70 A, 1.7 V, 200 W, 600 V, TO-247, 3 引脚
(EN)
STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 29 A, 600 V, 0.097 ohm, 10 V, 4 V
(EN)
STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 19.5 A, 600 V, 0.15 ohm, 10 V, 4 V
(EN)STMICROELECTRONICS
晶体管, MOSFET, N沟道, 20 A, 200 V, 38 mohm, 10 V, 3 V
(EN)STMICROELECTRONICS
晶体管, MOSFET, N沟道, 26 A, 250 V, 33 mohm, 10 V, 3.75 V
(EN)
STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 4 A, 950 V, 3 ohm, 10 V, 4 V
(EN)STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 11 A, 800 V, 350 mohm, 10 V, 4 V
(EN)STMICROELECTRONICS
晶体管, MOSFET, N沟道, 21 A, 500 V, 0.135 ohm, 10 V, 3 V
(EN)
STMICROELECTRONICS
Power MOSFET, Mdmesh DM2, N Channel, 28 A, 600 V, 0.094 ohm, 10 V, 4 V
(EN)
STMICROELECTRONICS
晶体管, 射频FET, 900 V, 27 MHz, STAC177B
(EN)
STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 4 A, 1.5 kV, 5 ohm, 10 V, 4 V
(EN)STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 13 A, 600 V, 0.26 ohm, 10 V, 3 V
(EN)STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 10 A, 650 V, 1 ohm, 10 V, 3 V
(EN)STMICROELECTRONICS
晶体管, MOSFET, N沟道, 4.4 A, 525 V, 1.2 ohm, 10 V, 3.75 V
(EN)STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 20 A, 600 V, 0.26 ohm, 10 V, 4 V
(EN)STMICROELECTRONICS
单晶体管, IGBT, 20 A, 1.8 V, 25 W, 600 V, TO-220FP, 3 引脚
(EN)STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 8.5 A, 650 V, 0.39 ohm, 10 V, 4 V
(EN)STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 10 A, 950 V, 0.68 ohm, 10 V, 4 V
(EN)STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 5 A, 600 V, 0.84 ohm, 10 V, 3 V
(EN)STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 12 A, 650 V, 0.35 ohm, 10 V, 3 V
(EN)STMICROELECTRONICS
晶体管, MOSFET, N沟道, 60 A, 500 V, 50 mohm, 10 V, 4 V
(EN)STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 17 A, 600 V, 0.17 ohm, 10 V, 4 V
(EN)
STMICROELECTRONICS
单晶体管 双极, NPN, 200 V, 250 W, 100 A, 27 hFE
(EN)STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 21 A, 600 V, 0.13 ohm, 10 V, 4 V
(EN)STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 3.8 A, 620 V, 1.7 ohm, 10 V, 3.75 V
(EN)
