ROHM
单晶体管 双极, NPN, 80 V, 120 MHz, 200 mW, 500 mA, 120 hFE
ROHM
晶体管, MOSFET, N沟道, 2.5 A, 30 V, 70 mohm, 10 V, 2.5 V
ROHM
功率场效应管, MOSFET, N沟道, 24 A, 600 V, 0.15 ohm, 10 V, 4 V
ROHM
晶体管, MOSFET, P沟道, -2.5 A, -30 V, 0.07 ohm, -10 V, -2.5 V
ROHM
晶体管, MOSFET, N沟道, 3 A, 45 V, 0.048 ohm, 4.5 V, 1.5 V
ROHM
Silicon Carbide Power MOSFET, N Channel, 17 A, 1.2 kV, 0.16 ohm, 18 V, 5.6 V
ROHM
功率场效应管, MOSFET, 碳化硅 (SiC), N沟道, 3.7 A, 1.7 kV, 1.15 ohm, 18 V, 2.8 V
ROHM
晶体管, MOSFET, N沟道, 20 A, 100 V, 0.033 ohm, 10 V, 2.5 V
ROHM
晶体管, MOSFET, N沟道, 2.5 A, 20 V, 0.039 ohm, 4.5 V, 300 mV
ROHM
单晶体管 双极, NPN, 120 V, 140 MHz, 200 mW, 50 mA, 180 hFE
ROHM
功率场效应管, MOSFET, N沟道, 11 A, 600 V, 0.34 ohm, 10 V, 5 V
ROHM
晶体管, MOSFET, P沟道, -3 A, -20 V, 0.055 ohm, -4.5 V, -2 V
ROHM
功率场效应管, MOSFET, N沟道, 31 A, 1.2 kV, 0.08 ohm, 18 V, 5.6 V
ROHM
Silicon Carbide Power MOSFET, N Channel, 70 A, 650 V, 0.03 ohm, 18 V, 5.6 V
ROHM
单晶体管, IGBT, 场截止沟道, 40 A, 1.65 V, 161 W, 650 V, TO-263S, 3 引脚
ROHM
单晶体管 双极, NPN, 80 V, 200 MHz, 200 mW, 100 mA, 10000 hFE
ROHM
单晶体管 双极, PNP, -30 V, 240 MHz, 500 mW, -5 A, 200 hFE
ROHM
单晶体管 双极, PNP, -32 V, 100 MHz, 500 mW, -2 A, 82 hFE
ROHM
单晶体管 双极, 双路, PNP, 20 V, 120 MHz, 500 mW, 4 A, 82 hFE
ROHM
单晶体管 双极, PNP, 20 V, 120 MHz, 500 mW, 4 A, 82 hFE
ROHM
单晶体管 双极, NPN, 50 V, 180 MHz, 200 mW, 150 mA, 120 hFE
ROHM
单晶体管 双极, NPN, 50 V, 180 MHz, 200 mW, 150 mA, 180 hFE
ROHM
单晶体管 双极, 高速, NPN, 50 V, 180 MHz, 200 mW, 150 mA, 270 hFE
ROHM
单晶体管 双极, NPN, 50 V, 180 MHz, 200 mW, 150 mA, 120 hFE
ROHM
单晶体管 双极, NPN, 50 V, 180 MHz, 200 mW, 150 mA, 180 hFE