产品分类：晶体管,规格：阈值电压 Vgs 3V,
INFINEON
晶体管, MOSFET, N沟道, 90 A, 40 V, 0.0011 ohm, 10 V, 3 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 30 A, 30 V, 6.5 mohm, 10 V, 3 V
(EN)
INFINEON
功率场效应管, MOSFET, N沟道, 9.2 A, 600 V, 0.41 ohm, 10 V, 3 V
(EN)
DIODES INC.
晶体管, MOSFET, N沟道, 45 A, 60 V, 0.0075 ohm, 10 V, 3 V
(EN)
INFINEON
功率场效应管, MOSFET, N沟道, 10.6 A, 600 V, 0.34 ohm, 10 V, 3 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 26 A, 400 V, 0.13 ohm, 10 V, 3 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 3 A, 500 V, 2.6 ohm, 10 V, 3 V
(EN)
VISHAY
场效应管, MOSFET, N沟道, 3A, 40V, 750mW
(EN)
INFINEON
功率场效应管, MOSFET, N沟道, 4 A, 800 V, 1.2 ohm, 10 V, 3 V
(EN)NEXPERIA
晶体管, MOSFET, N沟道, 23 A, 100 V, 75 mohm, 10 V, 3 V
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 70 A, 40 V, 6.6 mohm, 10 V, 3 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 21 A, 150 V, 0.042 ohm, 10 V, 3 V
(EN)NEXPERIA
晶体管, MOSFET, N沟道, 44 A, 60 V, 12.3 mohm, 10 V, 3 V
(EN)
INFINEON
功率场效应管, MOSFET, N沟道, 20.7 A, 650 V, 0.16 ohm, 10 V, 3 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 8 A, 30 V, 0.016 ohm, 10 V, 3 V
(EN)
INFINEON
功率场效应管, MOSFET, N沟道, 20.7 A, 650 V, 190 mohm, 10 V, 3 V
(EN)INFINEON
功率场效应管, MOSFET, N沟道, 5.1 A, 900 V, 0.94 ohm, 10 V, 3 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 29 A, 55 V, 0.0286 ohm, 10 V, 3 V
(EN)NEXPERIA
晶体管, MOSFET, N沟道, 100 A, 40 V, 2.6 mohm, 10 V, 3 V
(EN)
STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 2.2 A, 600 V, 1.5 ohm, 10 V, 3 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 12 A, 30 V, 0.011 ohm, 10 V, 3 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 40 A, 100 V, 0.0083 ohm, 10 V, 3 V
(EN)
ON SEMICONDUCTOR
Dual MOSFET, Dual N Channel, 17 A, 60 V, 0.031 ohm, 10 V, 3 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 11 A, 60 V, 107 mohm, 5 V, 3 V
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 56 A, 40 V, 0.0076 ohm, 10 V, 3 V
(EN)
