产品分类：晶体管,规格：阈值电压 Vgs 3V,
INFINEON
功率场效应管, MOSFET, N沟道, 15.1 A, 650 V, 0.36 ohm, 10 V, 3 V
(EN)
INFINEON
功率场效应管, MOSFET, N沟道, 6 A, 800 V, 0.78 ohm, 10 V, 3 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 21 A, 560 V, 0.16 ohm, 10 V, 3 V
(EN)INFINEON
功率场效应管, MOSFET, N沟道, 12 A, 600 V, 0.22 ohm, 10 V, 3 V
(EN)
FUJI ELECTRIC
功率场效应管, MOSFET, N沟道, 30 A, 600 V, 0.106 ohm, 10 V, 3 V
(EN)
FUJI ELECTRIC
功率场效应管, MOSFET, N沟道, 30 A, 600 V, 0.106 ohm, 10 V, 3 V
(EN)INFINEON
功率场效应管, MOSFET, N沟道, 16.7 A, 800 V, 0.25 ohm, 10 V, 3 V
(EN)INFINEON
功率场效应管, MOSFET, N沟道, 17 A, 800 V, 0.24 ohm, 10 V, 3 V
(EN)INFINEON
功率场效应管, MOSFET, N沟道, 11 A, 650 V, 0.34 ohm, 10 V, 3 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 120 A, 80 V, 0.0018 ohm, 10 V, 3 V
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 89 A, 100 V, 8.16 mohm, 10 V, 3 V
(EN)
STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 11 A, 600 V, 0.35 ohm, 10 V, 3 V
(EN)STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 13 A, 600 V, 0.255 ohm, 10 V, 3 V
(EN)INFINEON
功率场效应管, MOSFET, N沟道, 7.3 A, 700 V, 0.54 ohm, 10 V, 3 V
(EN)INFINEON
功率场效应管, MOSFET, N沟道, 11 A, 650 V, 0.34 ohm, 10 V, 3 V
(EN)STMICROELECTRONICS
晶体管, MOSFET, N沟道, 50 A, 60 V, 18 mohm, 10 V, 3 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 18.1 A, 500 V, 0.25 ohm, 13 V, 3 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 86 A, 55 V, 8 mohm, 10 V, 3 V
(EN)
INFINEON
功率场效应管, MOSFET, N沟道, 17 A, 800 V, 0.24 ohm, 10 V, 3 V
(EN)NEXPERIA
晶体管, MOSFET, N沟道, 32 A, 100 V, 29.3 mohm, 10 V, 3 V
(EN)INFINEON
功率场效应管, MOSFET, N沟道, 7.3 A, 600 V, 0.54 ohm, 10 V, 3 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 2.9 A, 60 V, 0.09 ohm, 10 V, 3 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 15.2 A, 200 V, 0.077 ohm, 10 V, 3 V
INFINEON
晶体管, MOSFET, N沟道, 100 A, 80 V, 0.0034 ohm, 10 V, 3 V
(EN)INFINEON
功率场效应管, MOSFET, N沟道, 3.2 A, 600 V, 1.26 ohm, 10 V, 3 V
(EN)
