ON SEMICONDUCTOR
晶体管 双极预偏置/数字, NPN和PNP执行, 50 V, 100 mA, 4.7 kohm, 10 kohm, 0.47 电阻比率
ON SEMICONDUCTOR
晶体管 双极预偏置/数字, NPN和PNP执行, 50 V, 100 mA, 47 kohm, 47 kohm, 1 电阻比率
ON SEMICONDUCTOR
晶体管 双极预偏置/数字, 双路 NPN, 50 V, 100 mA, 10 kohm, 10 kohm, 1 电阻比率
ON SEMICONDUCTOR
Bipolar (BJT) Single Transistor, NPN, 40 V, 300 MHz, 225 mW, 200 mA, 30 hFE
ON SEMICONDUCTOR
晶体管 双极预偏置/数字, 双路 NPN, 50 V, 100 mA, 10 kohm, 47 kohm, 0.21 电阻比率
ON SEMICONDUCTOR
双极晶体管阵列, AEC-Q101, 双NPN, 45 V, 500 mW, 100 mA, 420 hFE, SOT-563
ON SEMICONDUCTOR
MOSFET Transistor, N Channel, 2.2 A, 60 V, 0.107 ohm, 10 V, 2.5 V
ON SEMICONDUCTOR
晶体管 双极预偏置/数字, NPN和PNP执行, 50 V, 100 mA, 2.2 kohm, 47 kohm, 0.047 电阻比率
ON SEMICONDUCTOR
单晶体管 双极, NPN, 20 V, 150 MHz, 1.5 W, 5 A, 180 hFE
ON SEMICONDUCTOR
单晶体管 双极, PNP, -40 V, 100 MHz, 1.5 W, -5 A, 150 hFE
ON SEMICONDUCTOR
晶体管, PNP
ON SEMICONDUCTOR
单晶体管 双极, PNP, -40 V, 100 MHz, 540 mW, -2 A, 150 hFE
ON SEMICONDUCTOR
Bipolar (BJT) Single Transistor, PNP, -40 V, 250 MHz, 200 mW, -200 mA, 30 hFE
ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 7.6 A, 60 V, 0.019 ohm, 10 V, 2.5 V
ON SEMICONDUCTOR
晶体管 双极预偏置/数字, AEC-Q101, 单路NPN, 50 V, 100 mA, 10 kohm, 10 kohm, 1 电阻比率
ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 3.2 A, 20 V, 0.07 ohm, 4.5 V, 1.2 V
ON SEMICONDUCTOR
单晶体管 双极, AEC-Q101, PNP, -30 V, 100 MHz, 310 mW, -1 A, 40 hFE
ON SEMICONDUCTOR
Bipolar (BJT) Single Transistor, NPN, 80 V, 100 MHz, 225 mW, 500 mA, 100 hFE
ON SEMICONDUCTOR
双极晶体管阵列, AEC-Q101, 双NPN, 65 V, 380 mW, 100 mA, 300 hFE, SOT-363
ON SEMICONDUCTOR
双极晶体管
ON SEMICONDUCTOR
双极性晶体管, PNP, -350V, SOT-23
ON SEMICONDUCTOR
晶体管 双极预偏置/数字, 单路PNP, 50 V, 100 mA, 10 kohm, 10 kohm, 1 电阻比率
ON SEMICONDUCTOR
Bipolar (BJT) Single Transistor, PNP, -100 V, 120 MHz, 490 mW, -2 A, 50 hFE
ON SEMICONDUCTOR
双极晶体管阵列, AEC-Q101, 双PNP, -65 V, 380 mW, -100 mA, 0.9 hFE, SOT-363
ON SEMICONDUCTOR
Bipolar (BJT) Single Transistor, NPN, 100 V, 110 MHz, 490 mW, 2 A, 40 hFE