ROHM
单晶体管, IGBT, 场截止沟道, 70 A, 1.6 V, 234 W, 650 V, TO-247N, 3 引脚
ROHM
晶体管, MOSFET, P沟道, -4 A, -30 V, 0.032 ohm, -10 V, -2.5 V
ROHM
双极晶体管阵列, NPN, 50 V, 300 mW, 150 mA, 120 hFE, SC-74
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单晶体管, IGBT, 场截止沟道, 58 A, 1.6 V, 194 W, 650 V, TO-247N, 3 引脚
ROHM
单晶体管, IGBT, 场截止沟道, 55 A, 1.65 V, 194 W, 650 V, TO-247N, 3 引脚
ROHM
双路场效应管, MOSFET, 双N沟道, 6 A, 40 V, 0.027 ohm, 10 V, 2.5 V
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双路场效应管, MOSFET, N和P沟道, 4.5 A, 40 V, 0.0346 ohm, 10 V, 2.5 V
ROHM
单晶体管, IGBT, 场截止沟道, 40 A, 1.6 V, 144 W, 650 V, TO-247N, 3 引脚
ROHM
单晶体管, IGBT, 场截止沟道, 70 A, 1.6 V, 234 W, 650 V, TO-247N, 3 引脚
ROHM
单晶体管, IGBT, 场截止沟道, 70 A, 1.65 V, 234 W, 650 V, TO-247N, 3 引脚
ROHM
单晶体管, IGBT, 场截止沟道, 58 A, 1.6 V, 194 W, 650 V, TO-247N, 3 引脚
ROHM
单晶体管, IGBT, 场截止沟道, 40 A, 1.65 V, 144 W, 650 V, TO-247N, 3 引脚
ROHM
双路场效应管, MOSFET, 双N沟道, 2.5 A, 30 V, 0.065 ohm, 4.5 V, 1.5 V
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双路场效应管, MOSFET, 双N沟道, 200 mA, 50 V, 1.6 ohm, 4.5 V, 800 mV
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双路场效应管, MOSFET, 双P沟道, -5.5 A, -12 V, 0.015 ohm, -4.5 V, -1 V
ROHM
单晶体管, IGBT, 场截止沟道, 85 A, 1.6 V, 277 W, 650 V, TO-247N, 3 引脚
ROHM
晶体管, MOSFET, 低栅极阈值电压, N沟道, 4 A, 30 V, 66 mohm, 4.5 V, 1.5 V
ROHM
单晶体管 双极, PNP, -50 V, 140 MHz, 150 mW, -150 mA, 120 hFE
ROHM
晶体管, MOSFET, N沟道, 4.5 A, 30 V, 0.0169 ohm, 4.5 V, 1.5 V
ROHM
晶体管, MOSFET, P沟道, -7 A, -30 V, 0.012 ohm, -10 V, -2.5 V
ROHM
晶体管, MOSFET, P沟道, -16 A, -45 V, 0.035 ohm, -10 V, -3 V
ROHM
晶体管, MOSFET, N沟道, 7 A, 45 V, 0.018 ohm, 10 V, 2.5 V
ROHM
晶体管, MOSFET, N沟道, 2.5 A, 45 V, 0.095 ohm, 4.5 V, 1.5 V
ROHM
晶体管, MOSFET, N沟道, 8 A, 60 V, 0.057 ohm, 10 V, 2.5 V
ROHM
晶体管, MOSFET, N沟道, 1 A, 20 V, 0.34 ohm, 4.5 V, 1 V