产品分类：晶体管,规格：漏源电压, Vds 60V,
ON SEMICONDUCTOR/FAIRCHILD
MOSFET, N CHANNEL, 60V, 0.077OHM, 12A, TO-252AA-3
(EN)
VISHAY
晶体管, MOSFET, N沟道, 12 A, 60 V, 0.017 ohm, 10 V, 2 V
(EN)
VISHAY
场效应管, MOSFET, N沟道, 3.2A, 60V, 2W
(EN)
INFINEON
双路场效应管, MOSFET, 双N沟道, 2.6 A, 60 V, 0.12 ohm, 4.5 V, 1.6 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
双路场效应管, MOSFET, N和P沟道, 4.5 A, 60 V, 0.042 ohm, 10 V, 2.2 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 90 A, 60 V, 3 mohm, 10 V, 1.7 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
场效应管, MOSFET, N沟道, 60V, 500mA, SOT-23, 整卷
(EN)
VISHAY
场效应管, MOSFET, N沟道 与 P 通道, 60V, 0.046Ω
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 120 A, 60 V, 0.0019 ohm, 10 V, 3 V
(EN)
TEXAS INSTRUMENTS
晶体管, MOSFET, NexFET™, N沟道, 100 A, 60 V, 0.0057 ohm, 10 V, 2 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 4.3 A, 60 V, 55 mohm, 10 V, 2.2 V
(EN)
INFINEON
场效应管, MOSFET晶体管, 整卷
(EN)VISHAY
场效应管, MOSFET, N沟道, 60V, 240mA TO-236, 整卷
(EN)
INFINEON
晶体管, MOSFET, N沟道, 21 A, 60 V, 0.0035 ohm, 10 V, 4 V
(EN)
VISHAY
场效应管, MOSFET, N沟道, 60V, 5.6A, POWERPAK 1212, 整卷
(EN)VISHAY
场效应管, MOSFET, N沟道, 60V, 10.3A, SOIC-8, 整卷
(EN)STMICROELECTRONICS
双路场效应管, MOSFET, 双N沟道, 4 A, 60 V, 0.045 ohm, 10 V, 1.7 V
(EN)
NEXPERIA
场效应管, MOSFET, N沟道 通道, 60V, 300MA, 3-SOT-23, 整卷
(EN)
VISHAY
晶体管, MOSFET, N沟道, 330 mA, 60 V, 1.25 ohm, 10 V, 2.5 V
(EN)
INFINEON
场效应管, MOSFET, N沟道 通道, 60V, 195A, TO-262-3
(EN)STMICROELECTRONICS
晶体管, MOSFET, N沟道, 7.5 A, 60 V, 0.017 ohm, 10 V, 1 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
双路场效应管, MOSFET, 双N沟道, 115 mA, 60 V, 1.6 ohm, 5 V, 1.76 V
(EN)
NEXPERIA
双路场效应管, MOSFET, 沟槽式, N和P沟道, 330 mA, 60 V, 1 ohm, 10 V, 1.6 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 40 A, 60 V, 0.007 ohm, 10 V
(EN)
INFINEON
双路场效应管, MOSFET, 双N沟道, 20 A, 60 V, 0.021 ohm, 10 V, 1.7 V
(EN)
