DIODES INC.
晶体管, MOSFET, P沟道, 450 mA, -60 V, 5 ohm, -10 V, -3.5 V
DIODES INC.
晶体管, MOSFET, 低电压, N沟道, 7 A, 40 V, 50 mohm, 10 V, 1 V
INFINEON
晶体管, MOSFET, N沟道, 20 A, 30 V, 4 mohm, 10 V, 2.32 V
NEXPERIA
晶体管, MOSFET, N沟道, 3.2 A, 20 V, 0.042 ohm, 4.5 V, 650 mV
ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 276 A, 60 V, 0.00093 ohm, 10 V, 2 V
INFINEON
晶体管, MOSFET, N沟道, 130 A, 150 V, 0.0052 ohm, 10 V, 3 V
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 46 A, 30 V, 0.0077 ohm, 10 V, 1.9 V
ROHM
双路场效应管, MOSFET, N和P沟道, 4.5 A, 30 V, 0.036 ohm, 10 V, 2.5 V
VISHAY
场效应管, MOSFET, P沟道, HEXDIP
NEXPERIA
双路场效应管, MOSFET, 沟槽式, 双N沟道, 240 mA, 60 V, 2.2 ohm, 10 V, 1.6 V
VISHAY
晶体管, MOSFET, N沟道, 25 A, 30 V, 0.0032 ohm, 10 V, 1.1 V
TEXAS INSTRUMENTS
晶体管, MOSFET, N沟道, 35 A, 30 V, 0.004 ohm, 10 V, 1.4 V
ON SEMICONDUCTOR
Dual MOSFET, Dual N Channel, 7.4 A, 40 V, 0.0162 ohm, 10 V, 1.8 V
INFINEON
晶体管, MOSFET, P沟道, -90 A, -40 V, 0.0035 ohm, -10 V, -3 V
VISHAY
场效应管, MOSFET, N沟道
INFINEON
晶体管, MOSFET, N沟道, 100 A, 60 V, 0.0026 ohm, 10 V, 3.7 V
TEXAS INSTRUMENTS
晶体管, MOSFET, NexFET, N沟道, 100 A, 100 V, 0.0087 ohm, 10 V, 2.8 V
DIODES INC.
晶体管, MOSFET, P沟道, -7.2 A, -40 V, 0.041 ohm, -10 V, -3 V
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 16 A, 100 V, 0.02 ohm, 10 V, 2.9 V
INFINEON
晶体管, MOSFET, N沟道, 41 A, 100 V, 36 mohm, 10 V, 4 V
VISHAY
晶体管, MOSFET, N沟道, 40 A, 60 V, 0.011 ohm, 10 V, 2 V
INFINEON
晶体管, MOSFET, N沟道, 42 A, 55 V, 0.0065 ohm, 10 V, 3 V
INFINEON
晶体管, MOSFET, N沟道, 293 A, 60 V, 1.5 mohm, 20 V, 4 V