INFINEON
晶体管, MOSFET, P沟道, 11.5 A, -12 V, 14 mohm, -4.5 V, -900 mV
MULTICOMP
场效应管, MOSFET, N沟道, 60V, 1.2Ω, 115mA, SOT-23
INFINEON
晶体管, MOSFET, N沟道, 46 A, 100 V, 0.023 ohm, 10 V, 4 V
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 115 mA, 78 V, 2.53 ohm, 10 V, 1.76 V
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 50 A, 75 V, 13 mohm, 10 V, 4 V
NEXPERIA
双路场效应管, MOSFET, 双P沟道, -220 mA, -30 V, 2.8 ohm, -4.5 V, -900 mV
NEXPERIA
晶体管, MOSFET, P沟道, -5.7 A, -20 V, 0.027 ohm, -4.5 V, -700 mV
INFINEON
晶体管, MOSFET, N沟道, 20 A, 60 V, 0.009 ohm, 10 V, 3 V
INFINEON
晶体管, MOSFET, N沟道, 80 A, 75 V, 0.00734 ohm, 10 V, 4 V
ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 250 A, 60 V, 0.0011 ohm, 10 V, 2 V
VISHAY
双路场效应管, MOSFET, 双N沟道, 370 mA, 60 V, 1.4 ohm, 10 V, 2.5 V
INFINEON
晶体管, MOSFET, P沟道, -7 A, -30 V, 0.026 ohm, -10 V, -2.5 V
INTERNATIONAL RECTIFIER
场效应管, MOSFET, P沟道
INFINEON
晶体管, MOSFET, N沟道, 6.5 A, 20 V, 30 mohm, 4.5 V, 1.2 V
VISHAY
双路场效应管, MOSFET, 双N沟道, 28 A, 30 V, 0.01 ohm, 10 V, 1.2 V
ON SEMICONDUCTOR/FAIRCHILD
双路场效应管, MOSFET, N和P沟道, 220 mA, 25 V, 3.1 ohm, 4.5 V, 850 mV
MICROCHIP
晶体管, MOSFET, N沟道, 42 A, 25 V, 0.0173 ohm, 3.3 V, 1.35 V
ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 136 A, 30 V, 0.0015 ohm, 10 V, 2.2 V
TEXAS INSTRUMENTS
晶体管, MOSFET, N沟道, 100 A, 100 V, 0.0053 ohm, 10 V, 2.7 V
MICROCHIP
晶体管, MOSFET, P沟道, 2 A, -6 V, 0.07 ohm, -4.5 V, -1.2 V
ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 50 A, 60 V, 0.0077 ohm, 10 V, 2 V
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 4 A, 150 V, 0.101 ohm, 10 V, 4 V
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 21 A, 200 V, 0.11 ohm, 10 V, 2 V
VISHAY
场效应管, MOSFET, N沟道, 30V V(BR)DSS