INTERNATIONAL RECTIFIER
场效应管, MOSFET, P沟道, -2.2A, -150V, 8-SOIC
VISHAY
双路场效应管, MOSFET, N和P沟道, 6.7 A, 20 V, 0.18 ohm, 4.5 V, 600 mV
VISHAY
场效应管, MOSFET晶体管
NEXPERIA
晶体管, MOSFET, N沟道, 5.5 A, 30 V, 0.017 ohm, 10 V, 1.5 V
INFINEON
功率场效应管, MOSFET, N沟道, 17 A, 800 V, 0.24 ohm, 10 V, 3 V
TEXAS INSTRUMENTS
晶体管, MOSFET, N沟道, 100 A, 60 V, 0.0035 ohm, 10 V, 1.8 V
VISHAY
晶体管, MOSFET, N沟道, 33 A, 30 V, 0.006 ohm, 10 V, 1.2 V
ON SEMICONDUCTOR/FAIRCHILD
功率场效应管, MOSFET, N沟道, 7 A, 600 V, 0.53 ohm, 10 V, 5 V
INTERNATIONAL RECTIFIER
场效应管, MOSFET, N沟道
VISHAY
晶体管, MOSFET, N沟道, 32 A, 60 V, 0.0083 ohm, 10 V, 2 V
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 5.8 A, 100 V, 0.275 ohm, 10 V, 2 V
VISHAY
场效应管, MOSFET, N沟道, 150V, 4.8A, SOIC
ON SEMICONDUCTOR/FAIRCHILD
场效应管, MOSFET, N沟道+P沟道, 30V, SOIC
NEXPERIA
晶体管, MOSFET, N沟道, 9.4 A, 100 V, 0.104 ohm, 10 V, 3 V
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 58 A, 30 V, 0.007 ohm, 10 V, 2.5 V
INFINEON
晶体管, MOSFET, N沟道, 4.8 A, 500 V, 1.26 ohm, 13 V, 3 V
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 12 A, 100 V, 200 mohm, 5 V, 2 V
NEXPERIA
晶体管, MOSFET, N沟道, 75 A, 60 V, 4580 μohm, 10 V, 3 V
VISHAY
MOSFET, P CHANNEL, -60V, -190mA, SC-89-6
VISHAY
晶体管, MOSFET, N沟道, 30 A, 100 V, 0.0195 ohm, 10 V, 1.5 V
INFINEON
晶体管, MOSFET, N沟道, 30 A, 80 V, 0.0225 ohm, 10 V, 2.5 V
INFINEON
功率场效应管, MOSFET, N沟道, 6.8 A, 600 V, 0.9 ohm, 10 V, 3 V
ON SEMICONDUCTOR
双路场效应管, MOSFET, N和P沟道, 4 A, 20 V, 45 mohm, 4.5 V, 1.2 V