ON SEMICONDUCTOR/FAIRCHILD
双路场效应管, MOSFET, N和P沟道, 3 A, 20 V, 70 mohm, 4.5 V, 900 mV
INFINEON
晶体管, MOSFET, N沟道, 90 A, 60 V, 0.0037 ohm, 10 V, 1.7 V
NEXPERIA
晶体管, MOSFET, P沟道+肖特基, 3 A, 20 V, 0.08 ohm, 4.5 V, -600 mV
INFINEON
双路场效应管, MOSFET, 双P沟道, -5.1 A, -30 V, 0.135 ohm, -10 V, -1.8 V
ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 82 A, 60 V, 0.0056 ohm, 10 V, 3 V
ON SEMICONDUCTOR
晶体管, MOSFET, P沟道, -15.5 A, -60 V, 0.143 ohm, -5 V, -1.5 V
NEXPERIA
晶体管, MOSFET, N沟道, 4.7 A, 20 V, 0.024 ohm, 4.5 V, 700 mV
VISHAY
MOSFET, N CHANNEL, 400V, 3.1A, TO-252-3
ON SEMICONDUCTOR
晶体管, MOSFET, P沟道, -2 A, -30 V, 0.115 ohm, -10 V, -2.6 V
NEXPERIA
晶体管, MOSFET, N沟道, 1.9 A, 100 V, 250 mohm, 10 V, 3 V
ON SEMICONDUCTOR/FAIRCHILD
双路场效应管, MOSFET, 双N沟道, 220 mA, 25 V, 5 ohm, 4.5 V, 850 mV
NEXPERIA
晶体管, MOSFET, N沟道, 89 A, 60 V, 4.95 mohm, 10 V, 3 V
DIODES INC.
晶体管, MOSFET, P沟道, 3.5 A, -30 V, 59 mohm, -10 V, -600 mV
INFINEON
晶体管, MOSFET, N沟道, 10 A, 150 V, 0.0255 ohm, 10 V, 5 V
INFINEON
晶体管, MOSFET, N沟道, 15 A, 200 V, 78 mohm, 10 V, 5 V
INFINEON
场效应管, MOSFET
TEXAS INSTRUMENTS
晶体管, MOSFET, N沟道, 100 A, 30 V, 0.0039 ohm, 8 V, 1.3 V
STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 1.05 A, 900 V, 5 ohm, 10 V, 3.75 V
VISHAY
晶体管, MOSFET, N沟道, 18 A, 150 V, 0.07 ohm, 10 V, 3 V
INFINEON
晶体管, MOSFET, N沟道, 50 A, 60 V, 6.8 mohm, 10 V, 2.5 V
VISHAY
晶体管, MOSFET, P沟道, -35 A, -30 V, 0.0088 ohm, -4.5 V, -1 V