INFINEON
双路场效应管, MOSFET, N和P沟道, 7.3 A, 30 V, 0.023 ohm, 10 V, 1 V
INFINEON
晶体管, MOSFET, N沟道, 100 A, 60 V, 0.00465 ohm, 10 V, 4 V
INFINEON
晶体管, MOSFET, N沟道, 50 A, 200 V, 40 mohm, 10 V, 4 V
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 50 A, 100 V, 0.0085 ohm, 10 V, 2.8 V
TOSHIBA
晶体管, MOSFET, N沟道, 1.1 A, 20 V, 160 mohm, 4 V, 1.1 V
VISHAY
晶体管, MOSFET, N沟道, 60 A, 40 V, 0.005 ohm, 10 V, 2 V
INFINEON
晶体管, MOSFET, P沟道, -15 A, -20 V, 0.0082 ohm, -4.5 V, -1.2 V
ON SEMICONDUCTOR
晶体管, MOSFET, 肖特基二极管, P沟道, -3.2 A, -20 V, 0.064 ohm, -4.5 V, -1.5 V
DIODES INC.
双路场效应管, MOSFET, AEC-Q101, 双N沟道, 260 mA, 30 V, 2.8 ohm, 10 V, 1.5 V
INFINEON
晶体管, MOSFET, N沟道, 300 A, 60 V, 0.00066 ohm, 10 V, 2.8 V
VISHAY
晶体管, MOSFET, N沟道, 30 A, 80 V, 0.0155 ohm, 10 V, 2 V
VISHAY
晶体管, MOSFET, N沟道, 18.2 A, 30 V, 0.0078 ohm, 10 V, 3 V
VISHAY
功率场效应管, MOSFET, N沟道, 11 A, 600 V, 0.31 ohm, 10 V, 4 V
TEXAS INSTRUMENTS
晶体管, MOSFET, N沟道, 47 A, 30 V, 0.0094 ohm, 4.5 V, 1.3 V
VISHAY
晶体管, MOSFET, P沟道, 3.8 A, -200 V, 0.86 ohm, -10 V, -4 V
STMICROELECTRONICS
晶体管, MOSFET, N沟道, 80 A, 55 V, 8 mohm, 10 V, 3 V
DIODES INC.
晶体管, MOSFET, P沟道, 45 mA, -450 V, 150 ohm, -10 V, -3 V
VISHAY
晶体管, MOSFET, N沟道, 2.9 A, 20 V, 0.045 ohm, 8 V, 850 mV
VISHAY
晶体管, MOSFET, P沟道, -8.2 A, -12 V, 0.0068 ohm, -1.8 V, -800 mV
ON SEMICONDUCTOR/FAIRCHILD
双路场效应管, MOSFET, 双N沟道, 1 A, 100 V, 500 mohm, 10 V, 2.6 V
INFINEON
晶体管, MOSFET, N沟道, 35 A, 100 V, 0.0225 ohm, 10 V, 4 V
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, -2.8 A, -200 V, 2.06 ohm, -10 V, -5 V