TEXAS INSTRUMENTS
晶体管, MOSFET, N沟道, 100 A, 100 V, 0.0078 ohm, 10 V, 2.8 V
ON SEMICONDUCTOR
晶体管, MOSFET, P沟道, -780 mA, -20 V, 0.38 ohm, -4.5 V, -1.2 V
TEXAS INSTRUMENTS
双路场效应管, MOSFET, 双N沟道, 30 V, 0.0049 ohm, 8 V, 900 mV
INFINEON
晶体管, MOSFET, N沟道, 42 A, 100 V, 0.011 ohm, 10 V, 1 V
VISHAY
场效应管, MOSFET, P沟道, -20V, -60A, POWERPAK SO-8
INFINEON
功率场效应管, MOSFET, N沟道, 31.2 A, 700 V, 0.099 ohm, 10 V, 4 V
STMICROELECTRONICS
晶体管, MOSFET, N沟道, 18 A, 80 V, 28 mohm, 10 V, 3 V
INFINEON
晶体管, MOSFET, N沟道, 83 A, 150 V, 15 mohm, 10 V, 5 V
ROHM
双路场效应管, MOSFET, N和P沟道, 2 A, 100 V, 0.24 ohm, 10 V, 2.5 V
ROHM
晶体管, MOSFET, P沟道, -1.5 A, -100 V, 0.35 ohm, -10 V, -2.5 V
ROHM
晶体管, MOSFET, N沟道, 2.5 A, 30 V, 70 mohm, 10 V, 2.5 V
ROHM
功率场效应管, MOSFET, N沟道, 24 A, 600 V, 0.15 ohm, 10 V, 4 V
IXYS SEMICONDUCTOR
晶体管, MOSFET, 极性FET, N沟道, 30 A, 500 V, 200 mohm, 10 V, 5 V
ROHM
双路场效应管, MOSFET, N和P沟道, 3.4 A, 80 V, 0.09 ohm, 10 V, 2.5 V
IXYS SEMICONDUCTOR
功率场效应管, MOSFET, N沟道, 12 A, 1 kV, 1.05 ohm, 10 V, 4.5 V
INFINEON
晶体管, MOSFET, N沟道, 350 A, 40 V, 0.00135 ohm, 20 V, 4 V
INFINEON
晶体管, MOSFET, N沟道, 41 A, 150 V, 45 mohm, 10 V, 5.5 V
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, 2.4 A, -20 V, 52 mohm, -4.5 V, -800 mV
ROHM
晶体管, MOSFET, P沟道, -2.5 A, -30 V, 0.07 ohm, -10 V, -2.5 V
NEXPERIA
双路场效应管, MOSFET, 双N沟道, 400 mA, 30 V, 1 ohm, 4.5 V, 900 mV
ROHM
晶体管, MOSFET, N沟道, 3 A, 45 V, 0.048 ohm, 4.5 V, 1.5 V
ROHM
Silicon Carbide Power MOSFET, N Channel, 17 A, 1.2 kV, 0.16 ohm, 18 V, 5.6 V