VISHAY
场效应管, MOSFET, 双P沟道, -20V, 7.4A
INFINEON
晶体管, MOSFET, N沟道, 21 A, 30 V, 2.8 mohm, 4.5 V, 800 mV
INFINEON
晶体管, MOSFET, P沟道, -12.6 A, -30 V, 0.0063 ohm, -10 V, -1.5 V
VISHAY
晶体管, MOSFET, N沟道, 58 A, 40 V, 0.0062 ohm, 10 V, 3 V
INFINEON
晶体管, MOSFET, N沟道, 100 A, 30 V, 2.1 mohm, 10 V, 1 V
VISHAY
晶体管, MOSFET, P沟道, 7.7 A, -30 V, 0.025 ohm, -10 V, -600 mV
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 15 A, 30 V, 0.0049 ohm, 10 V, 1.2 V
VISHAY
场效应管, MOSFET, P沟道, -20V, 14A, SOIC
ON SEMICONDUCTOR
MOSFET, N CHANNEL, 30V, 0.0056OHM, 44A, SOIC-8
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, -10.8 A, -40 V, 0.0105 ohm, -10 V, -1.7 V
INFINEON
晶体管, MOSFET, P沟道, 4 A, -20 V, 0.0471 ohm, 4.5 V, -1.2 V
VISHAY
场效应管, MOSFET, N沟道, 30V, 6.3A, TSOP6
ON SEMICONDUCTOR/FAIRCHILD
MOSFET, N CHANNEL, 30V, 0.0038OHM, 18A, SOIC-8
VISHAY
场效应管, MOSFET, N沟道
INFINEON
功率场效应管, MOSFET, N沟道, 120 mA, 600 V, 25 ohm, 10 V, -1.4 V
TEXAS INSTRUMENTS
MOSFET, N CHANNEL, 30V, 60A, 0.0051OHM, SON-8
NEXPERIA
晶体管, MOSFET, 沟槽式, N沟道, 7.3 A, 12 V, 0.015 ohm, 4.5 V, 600 mV
VISHAY
MOSFET, P CHANNEL, -30V, 0.0127OHM, -19.2A, SOIC-8
VISHAY
场效应管, MOSFET, N沟道, 600V, 12A, TO-220F
VISHAY
MOSFET, P CHANNEL, -12V, -8.2A, TSSOP-8
VISHAY
场效应管, MOSFET, N沟道, 600V, 15A, TO-220F