VISHAY
MOSFET, P CHANNEL, -100V, -3.1A, TO-252-3
INFINEON
晶体管, MOSFET, N沟道, 28 A, 55 V, 0.04 ohm, 10 V, 2 V
ON SEMICONDUCTOR
功率场效应管, MOSFET, N沟道, 2.5 A, 1.5 kV, 8 ohm, 10 V
NTE ELECTRONICS
场效应管, MOSFET
ROHM
Silicon Carbide Power MOSFET, N Channel, 39 A, 650 V, 0.06 ohm, 18 V, 5.6 V
VISHAY
晶体管, MOSFET, N沟道, 40 A, 40 V, 0.00415 ohm, 10 V, 2.4 V
STMICROELECTRONICS
Power MOSFET, Mdmesh DM2, N Channel, 50 A, 600 V, 0.052 ohm, 10 V, 4 V
ON SEMICONDUCTOR/FAIRCHILD
场效应管, MOSFET, N沟道, 20V, 700mA, 整卷
IXYS SEMICONDUCTOR
功率场效应管, MOSFET, N沟道, 64 A, 600 V, 96 mohm, 10 V, 5 V
ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 380 mA, 60 V, 1.19 ohm, 10 V, 2.3 V
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, -4 A, -30 V, 0.044 ohm, -10 V, -1.8 V
VISHAY
场效应管, P通道, MOSFET, -150V, 690MA, TO-236
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, -8.2 A, -40 V, 0.022 ohm, -10 V, -1.6 V
INFINEON
晶体管, MOSFET, N沟道, 17 A, 55 V, 0.065 ohm, 10 V, 1 V
ON SEMICONDUCTOR/FAIRCHILD
功率场效应管, MOSFET, N沟道, 10 A, 600 V, 0.64 ohm, 10 V, 3 V
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, -20 A, -30 V, 4.6 mohm, -10 V, -1.8 V
ON SEMICONDUCTOR/FAIRCHILD
双路场效应管, MOSFET, 双N沟道, 7 A, 30 V, 0.019 ohm, 10 V, 1.7 V
INFINEON
晶体管, MOSFET, N沟道, 46 A, 300 V, 49 mohm, 10 V, 5 V
INFINEON
晶体管, MOSFET, N沟道, 31 A, 200 V, 82 mohm, 10 V, 5.5 V
IXYS SEMICONDUCTOR
晶体管, MOSFET, N沟道, 130 A, 300 V, 22 mohm, 10 V, 4 V
ON SEMICONDUCTOR/FAIRCHILD
场效应管, MOSFET
NTE ELECTRONICS
芯片, 高速开关, MOSFET, N沟道, 20A, TO220-3
ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 915 mA, 20 V, 0.127 ohm, 4.5 V, 760 mV
VISHAY
场效应管, MOSFET, P沟道, -20V, 4.7A TO-236, 整卷