VISHAY
晶体管, MOSFET, N沟道, 14 A, 500 V, 400 mohm, 10 V, 4 V
INFINEON
晶体管, MOSFET, N沟道, 59 A, 100 V, 25 mohm, 10 V, 5.5 V
VISHAY
晶体管, MOSFET, 沟槽式FET, N沟道, 11 A, 60 V, 0.008 ohm, 10 V, 3 V
VISHAY
功率场效应管, MOSFET, N沟道, 33 A, 600 V, 0.083 ohm, 10 V, 2 V
VISHAY
晶体管, MOSFET, N沟道, 50 A, 60 V, 0.0071 ohm, 10 V, 2 V
STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 21 A, 600 V, 0.13 ohm, 10 V, 4 V
INTERNATIONAL RECTIFIER
场效应管, MOSFET, N沟道, 60V, 172A, TO-247AC-3
VISHAY
场效应管, N通道, MOSFET, 900V, 4.7A TO-247
IXYS SEMICONDUCTOR
功率场效应管, MOSFET, N沟道, 26 A, 600 V, 250 mohm, 10 V, 4.5 V
VISHAY
场效应管, MOSFET, N沟道, 30V, 16A, SOIC
VISHAY
晶体管, MOSFET, 沟槽式FET, P沟道, -8 A, -60 V, 0.092 ohm, -10 V, -3 V
IXYS SEMICONDUCTOR
晶体管, MOSFET, HiPerFET, N沟道, 24 A, 500 V, 230 mohm, 10 V, 4 V
ADVANCED POWER ELECTRONICS CORP
晶体管, MOSFET, P沟道, -2.5 A, -20 V, 0.12 ohm, -10 V
INFINEON
晶体管, MOSFET, N沟道, 200 A, 30 V, 3 mohm, 10 V, 2.5 V
ROHM
双路场效应管, MOSFET, N和P沟道, 9 A, 30 V, 0.0123 ohm, 10 V, 2.5 V
ROHM
晶体管, MOSFET, P沟道, -2 A, -12 V, 0.075 ohm, -4.5 V, -1 V
STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 84 A, 650 V, 0.024 ohm, 10 V, 4 V
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 32 A, 100 V, 0.032 ohm, 10 V, 4 V
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 40 A, 250 V, 0.051 ohm, 10 V, 5 V
INFINEON
晶体管, MOSFET, N沟道, 14.1 A, 500 V, 0.35 ohm, 13 V, 3 V
IXYS SEMICONDUCTOR
功率场效应管, MOSFET, N沟道, 38 A, 600 V, 70 mohm, 10 V, 3.9 V