DIODES INC.
双路场效应管, MOSFET, 双N沟道, 200 mA, 50 V, 3.5 ohm, 10 V, 1.2 V
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 50 A, 60 V, 22 mohm, 10 V, 4 V
VISHAY
晶体管, MOSFET, P沟道, -8.9 A, -150 V, 0.245 ohm, -10 V, -2 V
INFINEON
晶体管, MOSFET, N沟道, 240 A, 60 V, 1500 μohm, 10 V, 2 V
VISHAY
晶体管, MOSFET, P沟道, 12 A, -200 V, 500 mohm, -10 V, -4 V
VISHAY
功率场效应管, MOSFET, N沟道, 47 A, 600 V, 0.053 ohm, 10 V, 2.5 V
STMICROELECTRONICS
晶体管, MOSFET, N沟道, 16 A, 60 V, 0.07 ohm, 10 V, 1 V
STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 8 A, 800 V, 0.55 ohm, 10 V, 4 V
INFINEON
功率场效应管, MOSFET, N沟道, 53.5 A, 600 V, 0.063 ohm, 10 V, 4 V
VISHAY
功率场效应管, MOSFET, N沟道, 6.7 A, 900 V, 1.6 ohm, 10 V, 4 V
STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 6.5 A, 600 V, 0.63 ohm, 10 V, 3 V
INFINEON
晶体管, MOSFET, P沟道, -180 A, -40 V, 0.0018 ohm, -10 V, -1.7 V
VISHAY
晶体管, MOSFET, P沟道, -14 A, -20 V, 0.006 ohm, -4.5 V, -400 mV
INFINEON
晶体管, MOSFET, N沟道, 100 mA, 240 V, 7.7 ohm, 10 V, 1.4 V
INFINEON
功率场效应管, MOSFET, N沟道, 22.4 A, 650 V, 0.135 ohm, 10 V, 4 V
VISHAY
双路场效应管, MOSFET, N和P沟道, 6 A, 30 V, 38 mohm, 10 V, 1 V
INFINEON
功率场效应管, MOSFET, N沟道, 11 A, 650 V, 0.34 ohm, 10 V, 3 V
NEXPERIA
晶体管, MOSFET, P沟道, -4.1 A, -20 V, 0.048 ohm, -4.5 V, -1 V
NEXPERIA
晶体管, MOSFET, N沟道, 9.4 A, 100 V, 0.117 ohm, 10 V, 1.7 V
ON SEMICONDUCTOR/FAIRCHILD
功率场效应管, MOSFET, N沟道, 8 A, 800 V, 1.29 ohm, 10 V, 5 V
VISHAY
双路场效应管, MOSFET, 双P沟道, -4 A, -20 V, 0.048 ohm, -4.5 V, -1.4 V