NEXPERIA
晶体管, MOSFET, P沟道, -3.5 A, -20 V, 0.048 ohm, -4.5 V, -1 V
INFINEON
晶体管, MOSFET, N沟道, 540 mA, 55 V, 0.346 ohm, 10 V, 1.6 V
NEXPERIA
晶体管, MOSFET, N沟道, 10.4 A, 30 V, 0.0165 ohm, 10 V, 1.5 V
ON SEMICONDUCTOR/FAIRCHILD
双路场效应管, MOSFET, 双N沟道, 6 A, 40 V, 29 mohm, 10 V, 1.9 V
INFINEON
晶体管, MOSFET, P沟道, 31 A, -55 V, 65 mohm, -10 V, -4 V
ON SEMICONDUCTOR/FAIRCHILD
双路场效应管, MOSFET, N和P沟道, 8.6 A, 30 V, 17 mohm, 10 V, 1.6 V
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 50 A, 60 V, 22 mohm, 10 V, 4 V
TOSHIBA
晶体管, MOSFET, N沟道, 400 mA, 30 V, 700 mohm, 10 V, 1.8 V
ON SEMICONDUCTOR
双路场效应管, MOSFET, 双N沟道, 4.1 A, 20 V, 0.06 ohm, 4.5 V, 1.2 V
ON SEMICONDUCTOR
Dual MOSFET, N and P Complement, 220 mA, 20 V, 0.75 ohm, 4.5 V, 1 V
ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 170 mA, 100 V, 6 ohm, 10 V, 2.6 V
INFINEON
晶体管, MOSFET, N沟道, 30 A, 30 V, 0.0112 ohm, 10 V, 1.5 V
VISHAY
晶体管, MOSFET, P沟道, -1.4 A, -150 V, 0.61 ohm, -10 V, -4 V
VISHAY
双路场效应管, MOSFET, N和P沟道, 700 mA, 30 V, 0.323 ohm, 10 V, 1.2 V
INFINEON
晶体管, MOSFET, P沟道, -760 mA, -30 V, 0.6 ohm, -10 V, -1 V
ON SEMICONDUCTOR/FAIRCHILD
场效应管, MOSFET, N沟道+P沟道, 40V TO-252
DIODES INC.
晶体管, MOSFET, N沟道, 310 mA, 60 V, 2 ohm, 10 V, 2 V
INFINEON
晶体管, MOSFET, P沟道, -18.6 A, -60 V, 0.1 ohm, -10 V, -3 V
INFINEON
晶体管, MOSFET, N沟道, 79 A, 60 V, 0.0071 ohm, 10 V, 2 V
STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 4 A, 600 V, 2 ohm, 10 V, 2.3 V