VISHAY
晶体管, MOSFET, N沟道, 78.5 A, 200 V, 0.0127 ohm, 10 V, 3 V
ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 19 A, 100 V, 68 mohm, 10 V, 2.2 V
NEXPERIA
晶体管, MOSFET, N沟道, 77 A, 40 V, 6.2 mohm, 10 V, 3 V
VISHAY
双路场效应管, MOSFET, 双P沟道, -8 A, -20 V, 0.0275 ohm, -4.5 V, -1 V
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 25 A, 250 V, 0.0363 ohm, 10 V, 3.9 V
INFINEON
晶体管, MOSFET, N沟道, 195 A, 40 V, 0.0014 ohm, 10 V, 3 V
INFINEON
晶体管, MOSFET, N沟道, 3.2 A, 60 V, 0.047 ohm, 10 V, 1.8 V
INFINEON
晶体管, MOSFET, N沟道, 52 A, 49 V, 0.0058 ohm, 10 V, 1.6 V
NEXPERIA
晶体管, MOSFET, N沟道, 100 A, 60 V, 3460 μohm, 5 V, 1.7 V
ON SEMICONDUCTOR/FAIRCHILD
功率场效应管, MOSFET, N沟道, 15 A, 650 V, 0.36 ohm, 10 V, 5 V
ON SEMICONDUCTOR/FAIRCHILD
场效应管, MOSFET, P沟道, -30V, 5.3A, SOIC
ROHM
晶体管, MOSFET, P沟道, -250 mA, -30 V, 0.9 ohm, -10 V, -2.5 V
ON SEMICONDUCTOR/FAIRCHILD
场效应管, MOSFET, P沟道, -20V, 0.5Ω, -350mA, SC-89-3
VISHAY
晶体管, MOSFET, N沟道, 14 A, 500 V, 0.32 ohm, 10 V, 3 V
TEXAS INSTRUMENTS
晶体管, MOSFET, N沟道, 100 A, 60 V, 0.005 ohm, 10 V, 1.9 V
INFINEON
晶体管, MOSFET, N沟道, 86 A, 30 V, 6.5 mohm, 10 V, 1.8 V
INTERNATIONAL RECTIFIER
场效应管, N 通道, MOSFET, 100V, 55A, TO-220AB
ON SEMICONDUCTOR/FAIRCHILD
场效应管, MOSFET, N沟道与P沟道, 20V, 0.18Ω, 700mA, SC-70-6
INFINEON
功率场效应管, MOSFET, N沟道, 23.8 A, 600 V, 0.144 ohm, 10 V, 4 V
INFINEON
功率场效应管, MOSFET, N沟道, 16.8 A, 600 V, 0.207 ohm, 10 V, 4 V
INFINEON
功率场效应管, MOSFET, N沟道, 15 A, 900 V, 0.28 ohm, 10 V, 3 V
INFINEON
晶体管, MOSFET, N沟道, 23 A, 500 V, 0.13 ohm, 10 V, 3 V