TEXAS INSTRUMENTS
双路场效应管, MOSFET, 双P沟道, -1.2 A, -20 V, 95 mohm, -4.5 V, -650 mV
INFINEON
晶体管, MOSFET, N沟道, 42 A, 100 V, 36 mohm, 10 V, 4 V
INFINEON
晶体管, MOSFET, N沟道, 38 A, 80 V, 29 mohm, 10 V, 4 V
VISHAY
双路场效应管, MOSFET, 双N沟道, 15 A, 60 V, 0.047 ohm, 10 V, 2 V
ON SEMICONDUCTOR/FAIRCHILD
双路场效应管, MOSFET, 双N沟道, 3.7 A, 20 V, 68 mohm, 1 V, 1 V
VISHAY
场效应管, MOSFET, N沟道, 20V, 21A, SOIC
INFINEON
晶体管, MOSFET, N沟道, 240 A, 60 V, 0.0016 ohm, 10 V, 3.7 V
VISHAY
晶体管, MOSFET, N沟道, 60 A, 100 V, 7.1 mohm, 10 V, 1.2 V
ON SEMICONDUCTOR
MOSFET Transistor, P Channel, -2.5 A, -30 V, 0.094 ohm, -10 V, -1.87 V
INFINEON
晶体管, MOSFET, N沟道, 42.6 A, 200 V, 55 mohm, 10 V, 5.5 V
ON SEMICONDUCTOR
功率场效应管, MOSFET, N沟道, 2.5 A, 1.5 kV, 8 ohm, 10 V
STMICROELECTRONICS
晶体管, MOSFET, N沟道, 1.7 A, 45 V, 0.25 ohm, 5 V, 500 mV
TOSHIBA
功率场效应管, MOSFET, N沟道, 2.5 A, 900 V, 6.4 ohm, 10 V, 4 V
VISHAY
晶体管, MOSFET, N沟道, 35 A, 40 V, 0.0063 ohm, 10 V, 2.2 V
VISHAY
晶体管, MOSFET, 通用, P沟道, 21 A, -100 V, 200 mohm, -10 V, -4 V
INFINEON
晶体管, MOSFET, N沟道, 180 A, 100 V, 0.0039 ohm, 10 V, 4 V
NEXPERIA
晶体管, MOSFET, N沟道, 3.1 A, 60 V, 0.046 ohm, 10 V, 1.7 V
VISHAY
MOSFET, P CHANNEL, -20V, -8A, TSOP-6
VISHAY
晶体管, MOSFET, P沟道, -8 A, -20 V, 0.023 ohm, -1.8 V, -900 mV
INFINEON
晶体管, MOSFET, N沟道, 80 A, 40 V, 3.1 mohm, 10 V, 1.2 V
VISHAY
场效应管, MOSFET, N沟道
VISHAY
晶体管, MOSFET, P沟道, 3.6 A, -200 V, 1.5 ohm, -10 V, -4 V
VISHAY
场效应管, MOSFET, N沟道, 60V, 10A