VISHAY
场效应管, MOSFET, N沟道, 600V, 33A, TO-247AD-3
INFINEON
功率场效应管, MOSFET, N沟道, 17 A, 800 V, 0.25 ohm, 10 V, 3 V
ON SEMICONDUCTOR
晶体管, MOSFET, P沟道, -70 A, -60 V, 0.01 ohm, -10 V, -2.6 V
TEXAS INSTRUMENTS
晶体管, MOSFET, N沟道, 27 A, 40 V, 0.0019 ohm, 10 V, 1.8 V
ON SEMICONDUCTOR/FAIRCHILD
功率场效应管, MOSFET, N沟道, 8 A, 800 V, 0.71 ohm, 10 V, 4.5 V
ON SEMICONDUCTOR/FAIRCHILD
双路场效应管, MOSFET, 双P沟道, -410 mA, -25 V, 0.85 ohm, -4.5 V, -820 mV
INFINEON
晶体管, MOSFET, AEC-Q101, N沟道, 35 A, 100 V, 0.02 ohm, 10 V, 1.7 V
VISHAY
晶体管, MOSFET, N沟道, 19 A, 500 V, 0.16 ohm, 10 V, 4 V
VISHAY
场效应管, MOSFET, N沟道, 60V, 240mA, TO-236
INFINEON
晶体管, MOSFET, N沟道, 70 A, 100 V, 0.0094 ohm, 10 V, 3 V
INFINEON
晶体管, MOSFET, N沟道, 62 A, 200 V, 0.022 ohm, 10 V, 5 V
VISHAY
晶体管, MOSFET, P沟道, -50 A, -30 V, 4.2 mohm, -10 V, -1.2 V
INTERNATIONAL RECTIFIER
场效应管, P通道, MOSFET, -55V, 31A, TO-220AB
INFINEON
晶体管, MOSFET, N沟道, 8.7 A, 20 V, 22 mohm, 4.5 V, 700 mV
STMICROELECTRONICS
晶体管, MOSFET, N沟道, 50 A, 100 V, 0.025 ohm, 10 V, 3 V
TEXAS INSTRUMENTS
双路场效应管, MOSFET, 双N沟道, 14 A, 30 V, 0.0066 ohm, 10 V, 1.8 V
INTERNATIONAL RECTIFIER
VISHAY
场效应管, MOSFET, N沟道
DIODES INC.
晶体管, MOSFET, N沟道, 6.4 A, 100 V, 125 mohm, 10 V, 4 V
VISHAY
晶体管, MOSFET, P沟道, -120 A, -40 V, 0.0025 ohm, -10 V, -2 V
STMICROELECTRONICS
晶体管, MOSFET, N沟道, 180 A, 100 V, 0.0023 ohm, 10 V, 3.5 V
VISHAY
双路场效应管, MOSFET, 双N沟道, 16 A, 30 V, 0.0075 ohm, 10 V, 1 V
DIODES INC.
晶体管, MOSFET, 低电压, N沟道, 2.4 A, 20 V, 100 mohm, 4.5 V, 1 V
VISHAY
场效应管, MOSFET, N沟道