STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 19 A, 650 V, 0.16 ohm, 10 V, 3 V
STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 4 A, 650 V, 1.2 ohm, 10 V, 3 V
NEXPERIA
晶体管, MOSFET, N沟道, 100 A, 60 V, 0.0032 ohm, 10 V, 3 V
INFINEON
晶体管, MOSFET, N沟道, 120 A, 100 V, 0.0048 ohm, 10 V, 4 V
ON SEMICONDUCTOR/FAIRCHILD
双路场效应管, MOSFET, 双P沟道, -340 mA, -60 V, 1.2 ohm, -10 V, -1.9 V
INTERNATIONAL RECTIFIER
场效应管, MOSFET, P沟道, -150V, -150A, D2-PAK
NEXPERIA
晶体管, MOSFET, N沟道, 2.5 A, 55 V, 150 mohm, 5 V, 1.5 V
INFINEON
晶体管, MOSFET, P沟道, -80 A, -30 V, 0.0056 ohm, -10 V, -1.5 V
STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 7 A, 650 V, 0.6 ohm, 10 V, 3 V
DIODES INC.
晶体管, MOSFET, 增强模式, N沟道, 800 mA, 100 V, 1.5 ohm, 10 V, 800 mV
ON SEMICONDUCTOR/FAIRCHILD
双路场效应管, MOSFET, 双N沟道, 60 A, 30 V, 0.0013 ohm, 10 V, 1.5 V
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 9.5 A, 200 V, 0.29 ohm, 10 V, 4 V
INFINEON
晶体管, MOSFET, N沟道, 195 A, 60 V, 0.00165 ohm, 10 V, 3.7 V
WOLFSPEED
功率场效应管, MOSFET, N沟道, 5.3 A, 1.7 kV, 1 ohm, 20 V, 2.6 V
VISHAY
晶体管, MOSFET, N沟道, 53.7 A, 150 V, 0.0148 ohm, 10 V, 4.5 V
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, -18 A, -20 V, 0.0064 ohm, -4.5 V, -500 mV
INFINEON
晶体管, MOSFET, N沟道, 42 A, 75 V, 26 mohm, 10 V, 4 V
DIODES INC.
晶体管, MOSFET, N沟道, 900 mA, 100 V, 650 mohm, 10 V, 3 V
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 6.2 A, 20 V, 24 mohm, 4.5 V, 820 mV
INFINEON
晶体管, MOSFET, N沟道, 100 A, 60 V, 0.0012 ohm, 10 V, 2.8 V
INTERNATIONAL RECTIFIER
场效应管, N 通道, MOSFET, 100V, 42A, D2-PAK
INFINEON
晶体管, MOSFET, N沟道, 33 A, 100 V, 0.044 ohm, 10 V, 4 V