产品分类：MOSFET晶体管,规格：晶体管封装类型 SOT-23,
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 1.7 A, 20 V, 70 mohm, 4.5 V, 900 mV
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 1.7 A, 30 V, 0.065 ohm, 10 V, 1.6 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, -120 mA, -25 V, 7.9 ohm, -4.5 V, -1 V
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 360 mA, 60 V, 1 ohm, 10 V, 1.1 V
(EN)NEXPERIA
晶体管, MOSFET, N沟道, 350 mA, 60 V, 1 ohm, 10 V, 1.6 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 1.4 A, 30 V, 0.119 ohm, 10 V, 1.6 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 500 mA, 60 V, 5 ohm, 10 V, 2.1 V
(EN)
DIODES INC.
晶体管, MOSFET, 增强模式, P沟道, -3.6 A, -20 V, 0.023 ohm, -4.5 V, -700 mV
(EN)NEXPERIA
晶体管, MOSFET, N沟道, 190 mA, 100 V, 10 ohm, 5 V, 2 V
(EN)NEXPERIA
晶体管, MOSFET, P沟道, -180 mA, -50 V, 4.5 ohm, -10 V, -1.6 V
(EN)VISHAY
晶体管, MOSFET, P沟道, -2.4 A, -20 V, 100 mohm, -4.5 V, -950 mV
(EN)INFINEON
晶体管, MOSFET, BRT, N沟道, 300 mA, 60 V, 1.6 ohm, 10 V, 2.1 V
ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 310 mA, 60 V, 0.86 ohm, 10 V, 1 V
(EN)DIODES INC.
晶体管, MOSFET, 增强模式, P沟道, 5.2 A, -12 V, 0.026 ohm, -4.5 V, -0.55 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 3.6 A, 40 V, 0.044 ohm, 10 V, 1.8 V
(EN)INFINEON
晶体管, MOSFET, P沟道, -2.6 A, -20 V, 0.09 ohm, -4.5 V, -1.1 V
(EN)INFINEON
晶体管, MOSFET, P沟道, -3 A, -30 V, 98 mohm, -10 V, -2.5 V
(EN)INFINEON
晶体管, MOSFET, P沟道, -3.6 A, -30 V, 0.051 ohm, -10 V, -1.3 V
(EN)DIODES INC.
晶体管, MOSFET, N沟道, 170 mA, 100 V, 6 ohm, 10 V, 1.4 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 5.8 A, 25 V, 20 mohm, 10 V, 1.7 V
(EN)DIODES INC.
晶体管, MOSFET, P沟道, 3.8 A, -30 V, 56 mohm, -10 V, -1.8 V
(EN)INFINEON
晶体管, MOSFET, P沟道, -3.7 A, -20 V, 65 mohm, -4.5 V, -550 mV
(EN)DIODES INC.
晶体管, MOSFET, P沟道, -4 A, -20 V, 31 mohm, -4.5 V, -550 mV
(EN)
DIODES INC.
晶体管, MOSFET, P沟道, -3 A, -60 V, 125 mohm, -10 V, -3 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 850 mA, 30 V, 300 mohm, 10 V, 1 V
(EN)
