TEXAS INSTRUMENTS
晶体管, MOSFET, N沟道, 274 A, 40 V, 0.0014 ohm, 10 V, 1.7 V
INFINEON
晶体管, MOSFET, N沟道, 180 A, 40 V, 0.0009 ohm, 10 V, 4 V
INFINEON
晶体管, MOSFET, N沟道, 127 A, 100 V, 0.0056 ohm, 20 V, 4 V
INFINEON
晶体管, MOSFET, N沟道, 120 A, 40 V, 1.2 mohm, 10 V, 2 V
INFINEON
晶体管, MOSFET, N沟道, 75 A, 100 V, 0.0048 ohm, 10 V, 4 V
INFINEON
晶体管, MOSFET, N沟道, 180 A, 60 V, 0.0013 ohm, 10 V, 3 V
INFINEON
晶体管, MOSFET, N沟道, 21 A, 60 V, 3.5 mohm, 10 V, 4 V
SEMELAB
晶体管, MOSFET, P沟道, 16 A, -160 V, 750 mohm, -1.5 V
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 50 A, 150 V, 33 mohm, 10 V, 4 V
SEMELAB
晶体管, MOSFET, P沟道, -16 A, -200 V
STMICROELECTRONICS
Power MOSFET, Mdmesh DM2, N Channel, 34 A, 600 V, 0.085 ohm, 10 V, 4 V
INFINEON
晶体管, MOSFET, N沟道, 120 A, 60 V, 0.0016 ohm, 10 V, 1.7 V
SEMELAB
晶体管, MOSFET, N沟道, 16 A, 160 V, 750 mohm, 1.5 V
IXYS SEMICONDUCTOR
功率场效应管, MOSFET, N沟道, 25 A, 800 V, 150 mohm, 10 V, 4 V
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 20 A, 500 V, 230 mohm, 10 V, 5 V
VISHAY
场效应管, MOSFET, N沟道, 650V, 24A, TO-220AB-3
VISHAY
功率场效应管, MOSFET, N沟道, 29 A, 600 V, 0.104 ohm, 10 V, 2 V
INFINEON
晶体管, MOSFET, N沟道, 120 A, 100 V, 0.0048 ohm, 10 V, 4 V
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 270 A, 80 V, 0.0013 ohm, 10 V, 2.9 V
INFINEON
晶体管, MOSFET, N沟道, 120 A, 100 V, 0.0027 ohm, 10 V, 3 V
VISHAY
场效应管, MOSFET, N沟道, 650V, 24A, TO-247AC-3
VISHAY
晶体管, MOSFET, N沟道, 16 A, 500 V, 0.317 ohm, 10 V, 3 V
VISHAY
功率场效应管, MOSFET, N沟道, 40 A, 600 V, 0.057 ohm, 10 V, 5 V
STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 42 A, 650 V, 0.056 ohm, 10 V, 4 V
STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 17.5 A, 950 V, 0.275 ohm, 10 V, 4 V