VISHAY
晶体管, P沟道
VISHAY
晶体管, MOSFET, P沟道, -8 A, -20 V, 0.02 ohm, -4.5 V, -1.5 V
ON SEMICONDUCTOR/FAIRCHILD
双路场效应管, MOSFET, N和P沟道, 2.5 A, 30 V, 0.095 ohm, 10 V, 1.8 V
TEXAS INSTRUMENTS
晶体管, MOSFET, N沟道, 100 A, 60 V, 0.0047 ohm, 10 V, 1.9 V
VISHAY
晶体管, MOSFET, N沟道, 2.6 A, 100 V, 0.161 ohm, 10 V, 1.6 V
VISHAY
MOSFET, P CHANNEL, -100V, -5.6A, TO-252-3
ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 4 A, 30 V, 0.038 ohm, 4.5 V, 1.3 V
ON SEMICONDUCTOR/FAIRCHILD
双路场效应管, MOSFET, 双P沟道, -460 mA, -25 V, 0.87 ohm, -4.5 V, -860 mV
INFINEON
功率场效应管, MOSFET, N沟道, 120 mA, 600 V, 45 ohm, 10 V, 1.9 V
INFINEON
晶体管, MOSFET, N沟道, 170 mA, 400 V, 13.6 ohm, 10 V, 1.9 V
INFINEON
晶体管, MOSFET, N沟道, 14 A, 30 V, 0.0071 ohm, 10 V, 1.8 V
VISHAY
晶体管, MOSFET, N沟道, 2.3 A, 60 V, 0.13 ohm, 10 V, 1 V
NEXPERIA
晶体管, MOSFET, 沟槽式, N沟道, 4.7 A, 12 V, 0.036 ohm, 4.5 V, 600 mV
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 44 A, 250 V, 0.058 ohm, 10 V, 3 V
VISHAY
晶体管, MOSFET, N沟道, 4.3 A, 100 V, 0.54 ohm, 10 V, 4 V
NEXPERIA
晶体管, MOSFET, N沟道, 600 mA, 20 V, 0.47 ohm, 4.5 V, 700 mV
STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 300 mA, 800 V, 13 ohm, 10 V, 3.75 V
TOSHIBA
功率场效应管, MOSFET, N沟道, 9 A, 900 V, 1.3 ohm, 10 V, 4 V
STMICROELECTRONICS
晶体管, MOSFET, N沟道, 14 A, 500 V, 0.2 ohm, 10 V, 3 V
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 21 A, 300 V, 160 mohm, 10 V, 5 V
INFINEON
功率场效应管, MOSFET, N沟道, 13 A, 650 V, 0.168 ohm, 10 V, 3.5 V
VISHAY
场效应管, MOSFET, N沟道
VISHAY
双路场效应管, MOSFET, 双N沟道, 3.7 A, 30 V, 0.047 ohm, 10 V, 2.2 V
INFINEON
晶体管, MOSFET, N沟道, 16 A, 560 V, 0.25 ohm, 10 V, 3 V
VISHAY
功率场效应管, MOSFET, N沟道, 1.7 A, 900 V, 8 ohm, 10 V, 4 V