INTERNATIONAL RECTIFIER
场效应管, MOSFET, 双N沟道, 2W, 8-SOIC
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, -4.5 A, -20 V, 0.039 ohm, -4.5 V, -1 V
DIODES INC.
晶体管, MOSFET, 增强模式, P沟道, -1.7 A, -60 V, 0.39 ohm, -10 V, -1 V
INFINEON
双路场效应管, MOSFET, 双路N和P通道, 6.8 A, 30 V, 0.022 ohm, 10 V, 1.8 V
INFINEON
晶体管, MOSFET, N沟道, 123 A, 100 V, 0.0042 ohm, 10 V, 3.6 V
VISHAY
功率场效应管, MOSFET, N沟道, 2 A, 600 V, 4.4 ohm, 10 V, 4 V
ON SEMICONDUCTOR/FAIRCHILD
场效应管, MOSFET, N沟道, UNIFET系列, 600V, 6.5A, TO-220F
VISHAY
场效应管, MOSFET, N沟道
INFINEON
场效应管, MOSFET
MICROCHIP
晶体管, MOSFET, N沟道, 500 mA, 400 V, 17 ohm, 0 V
ON SEMICONDUCTOR/FAIRCHILD
功率场效应管, MOSFET, N沟道, 8 A, 900 V, 1.12 ohm, 10 V, 5 V
STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 7 A, 650 V, 0.6 ohm, 10 V, 3 V
VISHAY
双路场效应管, MOSFET, 双N沟道, 1.3 A, 20 V, 0.165 ohm, 4.5 V, 400 mV
STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 35 A, 650 V, 0.067 ohm, 10 V, 4 V
ON SEMICONDUCTOR/FAIRCHILD
场效应管, MOSFET, N沟道, 250V, 14A
INFINEON
功率场效应管, MOSFET, N沟道, 60 A, 650 V, 0.04 ohm, 10 V, 3 V
NEXPERIA
晶体管, MOSFET, N沟道, 2.7 A, 40 V, 0.064 ohm, 10 V, 1.6 V
VISHAY
晶体管, MOSFET, N沟道, 5.4 A, 400 V, 550 mohm, 10 V, 4 V
DIODES INC.
晶体管, MOSFET, N沟道, 150 mA, 60 V, 5 ohm, 10 V, 2.5 V
INTERNATIONAL RECTIFIER
ON SEMICONDUCTOR/FAIRCHILD
双路场效应管, MOSFET, 双P沟道, -2.1 A, -80 V, 0.148 ohm, -10 V, -1.8 V
VISHAY
晶体管, MOSFET, P沟道, 11 A, -40 V, 0.0075 ohm, -10 V, -3 V
INFINEON
场效应管, MOSFET
VISHAY
晶体管, MOSFET, N沟道, 14.5 A, 500 V, 0.243 ohm, 10 V, 4 V
INFINEON
功率场效应管, MOSFET, N沟道, 2.6 A, 600 V, 3.06 ohm, 10 V, 3 V