TEXAS INSTRUMENTS
双路场效应管, MOSFET, 双P沟道, -1.2 A, -20 V, 80 mohm, -4.5 V, -700 mV
VISHAY
MOSFET, DUAL N CHANNEL, 30V, 60A, SOIC-8
TEXAS INSTRUMENTS
场效应管, MOSFET, N沟道, 100V, 100A, SON-8
STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 2.5 A, 800 V, 4.5 ohm, 10 V, 3.75 V
VISHAY
场效应管, P沟道, MOSFET, -100V, 28A, SOIC
VISHAY
晶体管, MOSFET, N沟道, 60 A, 30 V, 0.0011 ohm, 10 V, 1 V
VISHAY
MOSFET, N CHANNEL, 30V, 40A, POWERPAK SO-8
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 60 A, 100 V, 0.0063 ohm, 10 V, 2.9 V
DIODES INC.
晶体管, MOSFET, P沟道, 450 mA, -60 V, 5 ohm, -10 V, -3.5 V
DIODES INC.
晶体管, MOSFET, 低电压, N沟道, 7 A, 40 V, 50 mohm, 10 V, 1 V
NEXPERIA
晶体管, MOSFET, N沟道, 3.2 A, 20 V, 0.042 ohm, 4.5 V, 650 mV
ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 276 A, 60 V, 0.00093 ohm, 10 V, 2 V
ROHM
双路场效应管, MOSFET, N和P沟道, 4.5 A, 30 V, 0.036 ohm, 10 V, 2.5 V
VISHAY
场效应管, MOSFET, P沟道, HEXDIP
NEXPERIA
双路场效应管, MOSFET, 沟槽式, 双N沟道, 240 mA, 60 V, 2.2 ohm, 10 V, 1.6 V
VISHAY
晶体管, MOSFET, N沟道, 25 A, 30 V, 0.0032 ohm, 10 V, 1.1 V
ON SEMICONDUCTOR
Dual MOSFET, Dual N Channel, 7.4 A, 40 V, 0.0162 ohm, 10 V, 1.8 V
VISHAY
场效应管, MOSFET, N沟道
INFINEON
晶体管, MOSFET, N沟道, 100 A, 60 V, 0.0026 ohm, 10 V, 3.7 V
DIODES INC.
晶体管, MOSFET, P沟道, -7.2 A, -40 V, 0.041 ohm, -10 V, -3 V
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 16 A, 100 V, 0.02 ohm, 10 V, 2.9 V
VISHAY
晶体管, MOSFET, P沟道, -14.9 A, -30 V, 0.01 ohm, -10 V, -1.4 V
VISHAY
场效应管, MOSFET, 双N沟道, 30V, 24A, POWERPAIR-8
ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 270 mA, 30 V, 1 ohm, 4 V, 1.2 V
INTERNATIONAL RECTIFIER
场效应管, MOSFET, P沟道, -15A, -20V, 8-SOIC