VISHAY
晶体管, MOSFET, N沟道, 11.3 A, 100 V, 0.068 ohm, 10 V, 1.6 V
VISHAY
场效应管, MOSFET, P沟道, -20V, -4.5A, 8-SOIC
VISHAY
场效应管, MOSFET, N沟道, 600V, 33A, TO-220AB-3
DIODES INC.
晶体管, MOSFET, P沟道, -4.3 A, -20 V, 0.025 ohm, -10 V, -1.4 V
ON SEMICONDUCTOR/FAIRCHILD
场效应管, MOSFET, N沟道, 60V, 4A, SOT-223
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 20 A, 100 V, 0.0291 ohm, 10 V, 2.5 V
INFINEON
晶体管, MOSFET, N沟道, 13 A, 30 V, 10 mohm, 10 V, 1.8 V
ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 91 A, 30 V, 0.0037 ohm, 4.5 V, 1.63 V
ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 1.2 A, 250 V, 1.8 ohm, 10 V, 3.5 V
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 20 A, 30 V, 0.0085 ohm, 10 V, 2 V
ON SEMICONDUCTOR
晶体管, MOSFET, P沟道, 3.2 A, -20 V, 0.07 ohm, -4.5 V, -720 mV
TEXAS INSTRUMENTS
晶体管, MOSFET, N沟道, 13.1 A, 100 V, 0.049 ohm, 10 V, 3.2 V
ON SEMICONDUCTOR/FAIRCHILD
功率场效应管, MOSFET, N沟道, 3 A, 800 V, 4 ohm, 10 V, 5 V
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 15.6 A, 100 V, 0.078 ohm, 10 V, 4 V
VISHAY
MOSFET, N CHANNEL, 30V, 40A, SOIC-8
TEXAS INSTRUMENTS
晶体管, MOSFET, N沟道, 89 A, 40 V, 0.0041 ohm, 10 V, 1.8 V
TEXAS INSTRUMENTS
双路场效应管, MOSFET, 双N沟道, 40 A, 30 V, 0.005 ohm, 4.5 V, 2.1 V
VISHAY
MOSFET, N CHANNEL, 60V, 2.7A, SOT-223-4
NEXPERIA
双路场效应管, MOSFET, N和P沟道, 2.2 A, 30 V, 0.08 ohm, 10 V, 2.8 V
VISHAY
晶体管, MOSFET, P沟道, 5.1 A, -60 V, 500 mohm, -10 V, -4 V
ON SEMICONDUCTOR/FAIRCHILD
双路场效应管, MOSFET, 双N沟道, 750 mA, 30 V, 0.25 ohm, 4.5 V, 1 V
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, 2 A, -12 V, 0.084 ohm, -4.5 V, -700 mV
INFINEON
功率场效应管, MOSFET, N沟道, 4.5 A, 600 V, 0.85 ohm, 10 V, 3 V
INFINEON
晶体管, MOSFET, P沟道, 64 A, -55 V, 20 mohm, -10 V, -4 V
TEXAS INSTRUMENTS
MOSFET, N CHANNEL, 60V, 50A, 0.0078OHM, SON-8