INFINEON
双路场效应管, MOSFET, N和P沟道, 4.3 A, 20 V, 50 mohm, 4.5 V, 700 mV
NEXPERIA
晶体管, MOSFET, N沟道, 100 A, 25 V, 2.3 mohm, 4.5 V, 700 mV
INFINEON
晶体管, MOSFET, N沟道, 2.7 A, 55 V, 160 mohm, 10 V, 4 V
VISHAY
场效应管, P沟道, MOSFET
VISHAY
晶体管, MOSFET, P沟道, -1.9 A, -200 V, 3 ohm, -10 V, -4 V
ON SEMICONDUCTOR/FAIRCHILD
双路场效应管, MOSFET, 双N沟道, 3.5 A, 100 V, 0.047 ohm, 10 V, 3.1 V
VISHAY
晶体管, MOSFET, N沟道, 8 A, 500 V, 850 mohm, 10 V, 4 V
INFINEON
晶体管, MOSFET, P沟道, -12.6 A, -30 V, 0.0067 ohm, -10 V, -1.5 V
INFINEON
功率场效应管, MOSFET, N沟道, 21 mA, 600 V, 280 ohm, 10 V, -2 V
DIODES INC.
晶体管, MOSFET, N沟道, 4.2 A, 20 V, 0.025 ohm, 4.5 V, 1 V
VISHAY
MOSFET, N CHANNEL, 20V, 0.00155OHM, 46A, SOIC-8
INFINEON
功率场效应管, MOSFET, N沟道, 4 A, 800 V, 1.2 ohm, 10 V, 3 V
INFINEON
晶体管, MOSFET, P沟道, -12 A, -30 V, 0.0085 ohm, -20 V, -1.8 V
ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 915 mA, 20 V, 0.127 ohm, 4.5 V, 760 mV
VISHAY
场效应管, MOSFET, P沟道, 30V, 11.4A
INFINEON
晶体管, MOSFET, N沟道, 4.5 A, 60 V, 0.049 ohm, 10 V, 1.8 V
VISHAY
晶体管, MOSFET, P沟道, -1.6 A, -60 V, 285 mohm, -10 V, -1 V
VISHAY
晶体管, MOSFET, P沟道, -2.9 A, -60 V, 0.18 ohm, -10 V, -3 V
INTERNATIONAL RECTIFIER
场效应管, N 通道, MOSFET, 30V, 7A, SOICSIS
VISHAY
晶体管, MOSFET, P沟道, -2.1 A, -20 V, 0.116 ohm, -4.5 V, 600 mV
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, -2.1 A, -80 V, 0.147 ohm, -10 V, -1.6 V
VISHAY
晶体管, MOSFET, N沟道, 30 A, 20 V, 0.0046 ohm, 10 V, 2.5 V
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 16 A, 30 V, 0.0124 ohm, 10 V, 1.9 V
INTERNATIONAL RECTIFIER
场效应管, MOSFET, P沟道, -30V, -2.3 A, SOT-23
ON SEMICONDUCTOR/FAIRCHILD
双路场效应管, MOSFET, 双N沟道, 7.9 A, 30 V, 0.017 ohm, 10 V, 1.7 V