STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 4 A, 650 V, 1.2 ohm, 10 V, 3 V
DIODES INC.
晶体管, MOSFET, N沟道, 7.2 A, 40 V, 50 mohm, 10 V, 1 V
INFINEON
晶体管, MOSFET, N沟道, 90 A, 40 V, 0.0011 ohm, 10 V, 3 V
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 18 A, 60 V, 0.0037 ohm, 10 V, 3.1 V
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 12 A, 60 V, 0.0088 ohm, 10 V, 4 V
INFINEON
晶体管, MOSFET, N沟道, 170 mA, 400 V, 13.6 ohm, 10 V, 1.9 V
VISHAY
场效应管, MOSFET, P沟道
ON SEMICONDUCTOR/FAIRCHILD
MOSFET, P CHANNEL, -12V, 0.014OHM, -10A, MICROFET-6
VISHAY
晶体管, MOSFET, N沟道, 30 A, 30 V, 6.5 mohm, 10 V, 3 V
ON SEMICONDUCTOR
场效应管, MOSFET, P沟道, -20V, 400mA, SOT-23
VISHAY
MOSFET, P CHANNEL, -60V, -190mA, SOT-416-3
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 28 A, 40 V, 19 mohm, 10 V, 2.1 V
INFINEON
晶体管, MOSFET, N沟道, 900 mA, 150 V, 1.2 ohm, 10 V, 5.5 V
INFINEON
晶体管, MOSFET, N沟道, 2.6 A, 150 V, 185 mohm, 10 V, 5 V
INFINEON
功率场效应管, MOSFET, N沟道, 9.2 A, 600 V, 0.41 ohm, 10 V, 3 V
TEXAS INSTRUMENTS
晶体管, MOSFET, N沟道, 100 A, 40 V, 0.0018 ohm, 10 V, 1.8 V
INFINEON
晶体管, MOSFET, N沟道, 100 A, 100 V, 0.0068 ohm, 10 V, 1.85 V
VISHAY
晶体管, MOSFET, N沟道, 4.3 A, 100 V, 540 mohm, 10 V, 4 V
DIODES INC.
晶体管, MOSFET, N沟道, 270 mA, 60 V, 5 ohm, 10 V, 2.4 V
ON SEMICONDUCTOR
晶体管, MOSFET, P沟道, -3 A, -12 V, 0.054 ohm, -4.5 V, -1.4 V
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 2 A, 400 V, 2.8 ohm, 10 V, 5 V
TEXAS INSTRUMENTS
场效应管, MOSFET, N沟道, 100V, 100A, SON-8
VISHAY
晶体管, MOSFET, P沟道, 9.8 A, -20 V, 0.0085 ohm, 12 V, -1.4 V
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 850 mA, 200 V, 1.1 ohm, 10 V, 2 V
ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 78 A, 30 V, 0.0027 ohm, 10 V, 2.2 V