VISHAY
双路场效应管, MOSFET, N和P沟道, 5.3 A, 60 V, 0.046 ohm, 10 V, 1 V
NEXPERIA
晶体管, MOSFET, N沟道, 300 mA, 60 V, 2.8 ohm, 10 V, 2 V
INFINEON
场效应管, MOSFET, N沟道, 30V, 8.7A, 6-PQFN
VISHAY
晶体管, MOSFET, N沟道, 35 A, 20 V, 0.003 ohm, 10 V, 1 V
DIODES INC.
双路场效应管, MOSFET, 双P沟道, -7.6 A, -40 V, 0.018 ohm, -10 V, -1.3 V
ON SEMICONDUCTOR
双路场效应管, MOSFET, N和P沟道, 2.9 A, 20 V, 0.058 ohm, 4.5 V, 600 mV
ON SEMICONDUCTOR/FAIRCHILD
场效应管, MOSFET, 双路N沟道, 30V, 250UΩ, 750mA, SC-70-6
VISHAY
晶体管, MOSFET, P沟道, -40 A, -20 V, 0.004 ohm, -10 V, -2.2 V
STMICROELECTRONICS
晶体管, MOSFET, N沟道, 9 A, 300 V, 400 mohm, 10 V, 3.75 V
STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 4 A, 650 V, 1.2 ohm, 10 V, 3 V
VISHAY
场效应管, MOSFET, N沟道
VISHAY
功率场效应管, MOSFET, N沟道, 29 A, 600 V, 0.104 ohm, 10 V, 2 V
VISHAY
MOSFET, N CHANNEL, 60V, 2.7A, SOT-223-4
ON SEMICONDUCTOR/FAIRCHILD
双路场效应管, MOSFET, 双P沟道, 2.5 A, -12 V, 90 mohm, -4.5 V, 700 mV
VISHAY
晶体管, MOSFET, P沟道, -5.8 A, -8 V, 0.028 ohm, -4.5 V, -1 V
DIODES INC.
晶体管, MOSFET, N沟道, 1.7 A, 20 V, 180 mohm, 4.5 V, 700 mV
STMICROELECTRONICS
双路场效应管, MOSFET, 双P沟道, -4 A, -30 V, 0.07 ohm, 10 V, 1 V
TOSHIBA
晶体管, MOSFET, 功率, N沟道, 28 A, 60 V, 0.0066 ohm, 10 V, 1.3 V
ON SEMICONDUCTOR/FAIRCHILD
场效应管, MOSFET, P沟道, -100V, 1A SOT-223
INFINEON
晶体管, MOSFET, N沟道, 45 A, 100 V, 16.7 mohm, 10 V, 3 V
TEXAS INSTRUMENTS
晶体管, MOSFET, N沟道, 500 mA, 20 V, 0.99 ohm, 8 V, 1.1 V
INFINEON
功率场效应管, MOSFET, N沟道, 7.3 A, 650 V, 0.54 ohm, 10 V, 3 V
ON SEMICONDUCTOR/FAIRCHILD
双路场效应管, MOSFET, 双N沟道, 9.4 A, 20 V, 14 mohm, 4.5 V, 1 V
ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 37 A, 60 V, 0.0101 ohm, 10 V, 1.5 V
INTERNATIONAL RECTIFIER
场效应管, MOSFET, N沟道, 60V, 1.2A