NEXPERIA
晶体管, MOSFET, P沟道, -230 mA, -30 V, 2.8 ohm, -4.5 V, -900 mV
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, -13 A, -35 V, 9.7 mohm, -10 V, -1.6 V
NEXPERIA
P CHANNEL, DMOS FET, -30V, -520MA, 3-SOT-23
ON SEMICONDUCTOR/FAIRCHILD
功率场效应管, MOSFET, N沟道, 200 mA, 800 V, 15.5 ohm, 10 V, 5 V
STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 5 A, 650 V, 1 ohm, 10 V, 4 V
VISHAY
场效应管, MOSFET, P沟道
VISHAY
双路场效应管, MOSFET, 双N沟道, 4.1 A, 20 V, 0.024 ohm, 4.5 V, 1 V
DIODES INC.
晶体管, MOSFET, P沟道, -130 mA, -50 V, 10 ohm, -5 V, -1.6 V
ON SEMICONDUCTOR/FAIRCHILD
双路场效应管, MOSFET, N和P沟道, 600 mA, 20 V, 700 mohm, 4.5 V, 600 mV
VISHAY
场效应管, MOSFET, P沟道, -60V, 4.7A, SOIC
VISHAY
晶体管, N沟道, 12A, 20V, 3.5W
VISHAY
功率场效应管, MOSFET, N沟道, 6 A, 620 V, 0.78 ohm, 10 V
VISHAY
晶体管, MOSFET, P沟道, -9.7 A, -30 V, 0.0088 ohm, -10 V, -1.4 V
STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 5.5 A, 620 V, 0.95 ohm, 10 V, 3.75 V
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 300 mA, 60 V, 2 ohm, 10 V, 2.5 V
TEXAS INSTRUMENTS
MOSFET, N CHANNEL, 30V, 100A, 950uOHM, SON-8
INFINEON
晶体管, MOSFET, N沟道, 18 A, 30 V, 4.8 mohm, 10 V, 1.8 V
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, 11 A, -30 V, 14 mohm, -10 V, -1.7 V
DIODES INC.
晶体管, MOSFET, AEC-Q101, P沟道, -820 mA, -20 V, 0.5 ohm, -4.5 V, -1 V
VISHAY
晶体管, MOSFET, P沟道, -3.6 A, -60 V, 54 mohm, -10 V, -1 V
INFINEON
晶体管, MOSFET, N沟道, 100 A, 80 V, 0.0034 ohm, 10 V, 3 V
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 11.6 A, 30 V, 0.0079 ohm, 10 V, 2.5 V
ON SEMICONDUCTOR/FAIRCHILD
MOSFET, N CHANNEL, 60V, 0.0265OHM, 6.1A,
VISHAY
MOSFET, N CHANNEL, 30V, 14A, SOIC-8
INFINEON
晶体管, MOSFET, N沟道, 39 A, 30 V, 10 mohm, 10 V, 1 V