TEXAS INSTRUMENTS
晶体管, MOSFET, N沟道, 100 A, 30 V, 0.0039 ohm, 8 V, 1.3 V
STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 1.05 A, 900 V, 5 ohm, 10 V, 3.75 V
VISHAY
晶体管, MOSFET, P沟道, -35 A, -30 V, 0.0088 ohm, -4.5 V, -1 V
STMICROELECTRONICS
晶体管, MOSFET, N沟道, 4 A, 60 V, 0.07 ohm, 10 V, 2.8 V
INFINEON
晶体管, MOSFET, N沟道, 55 A, 40 V, 0.0059 ohm, 10 V, 1.8 V
INFINEON
功率场效应管, MOSFET, N沟道, 11 A, 800 V, 0.38 ohm, 10 V, 3 V
INFINEON
双路场效应管, MOSFET, 双N沟道, 5 A, 55 V, 0.031 ohm, 10 V, 1.6 V
ROHM
晶体管, MOSFET, AEC-Q101, N沟道, 5 A, 60 V, 0.034 ohm, 10 V, 2.5 V
VISHAY
晶体管, MOSFET, N沟道, 370 mA, 500 V, 3 ohm, 10 V, 4 V
VISHAY
双路场效应管, MOSFET, 双P沟道, -1.3 A, -20 V, 0.64 ohm, -1.8 V, -400 mV
VISHAY
晶体管, MOSFET, N沟道, 7.7 A, 60 V, 200 mohm, 10 V, 4 V
ON SEMICONDUCTOR/FAIRCHILD
场效应管, MOSFET, N沟道, 20V, 0.00024Ω, 600mA, SC-89-3
INFINEON
双路场效应管, MOSFET, N和P, 1.4 A, 30 V, 0.119 ohm, 10 V, 1.6 V
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, -3.6 A, -30 V, 0.063 ohm, -10 V, -1.9 V
ON SEMICONDUCTOR/FAIRCHILD
场效应管, MOSFET, N+P沟道, 30V, SOIC
INFINEON
双路场效应管, MOSFET, 双P沟道, -2 A, -30 V, 0.062 ohm, -10 V, -1.5 V
ON SEMICONDUCTOR/FAIRCHILD
MOSFET, N CHANNEL, 150V, 0.015OHM, 49A, POWER 56-8
VISHAY
晶体管, MOSFET, N沟道, 30 A, 30 V, 0.0026 ohm, 10 V, 2.5 V
INFINEON
晶体管, MOSFET, N沟道, 5 A, 55 V, 0.048 ohm, 10 V, 3 V
DIODES INC.
晶体管, MOSFET, N沟道, 68.8 A, 100 V, 0.0065 ohm, 10 V, 3 V
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 18 A, 40 V, 0.0033 ohm, 10 V, 1.9 V
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 30 A, 50 V, 0.03 ohm, 10 V, 3 V
NEXPERIA
晶体管, MOSFET, P沟道, -4.5 A, -20 V, 0.028 ohm, -4.5 V, -1 V
ROHM
晶体管, MOSFET, AEC-Q101, N沟道, 4.5 A, 30 V, 0.03 ohm, 4.5 V, 1.5 V
VISHAY
双路场效应管, MOSFET, 双N沟道, 5.3 A, 60 V, 0.046 ohm, 10 V, 2.5 V